Improvement in electrical properties of carbon nanotube via interconnects

Masayuki Katagiri, Yuichi Yamazaki, Makoto Wada, Masayuki Kitamura, Naoshi Sakuma, Mariko Suzuki, Shintaro Sato, Mizuhisa Nihei, Akihiro Kajita, Tadashi Sakai, Yuji Awano

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19 Citations (Scopus)

Abstract

We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier layer. The top electrode formation with good coverage on CNTs reduces contact resistance. The current-voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in variousdiameter via holes.

Original languageEnglish
Article number05EF01
JournalJapanese Journal of Applied Physics
Volume50
Issue number5 PART 2
DOIs
Publication statusPublished - 2011 May
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Katagiri, M., Yamazaki, Y., Wada, M., Kitamura, M., Sakuma, N., Suzuki, M., Sato, S., Nihei, M., Kajita, A., Sakai, T., & Awano, Y. (2011). Improvement in electrical properties of carbon nanotube via interconnects. Japanese Journal of Applied Physics, 50(5 PART 2), [05EF01]. https://doi.org/10.1143/JJAP.50.05EF01