Improvement in electrical properties of carbon nanotube via interconnects

Masayuki Katagiri; Yuichi Yamazaki; Makoto Wada; Masayuki Kitamura; Naoshi Sakuma; Mariko Suzuki; Shintaro Sato; Mizuhisa Nihei; Akihiro Kajita; Tadashi Sakai; Yuji Awano

doi:10.1143/JJAP.50.05EF01

Improvement in electrical properties of carbon nanotube via interconnects

Masayuki Katagiri, Yuichi Yamazaki, Makoto Wada, Masayuki Kitamura, Naoshi Sakuma, Mariko Suzuki, Shintaro Sato, Mizuhisa Nihei, Akihiro Kajita, Tadashi Sakai, Yuji Awano

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier layer. The top electrode formation with good coverage on CNTs reduces contact resistance. The current-voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in variousdiameter via holes.

Original language	English
Article number	05EF01
Journal	Japanese journal of applied physics
Volume	50
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.50.05EF01
Publication status	Published - 2011 May
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier layer. The top electrode formation with good coverage on CNTs reduces contact resistance. The current-voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in variousdiameter via holes.",

author = "Masayuki Katagiri and Yuichi Yamazaki and Makoto Wada and Masayuki Kitamura and Naoshi Sakuma and Mariko Suzuki and Shintaro Sato and Mizuhisa Nihei and Akihiro Kajita and Tadashi Sakai and Yuji Awano",

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AU - Katagiri, Masayuki

AU - Yamazaki, Yuichi

AU - Wada, Makoto

AU - Kitamura, Masayuki

AU - Sakuma, Naoshi

AU - Suzuki, Mariko

AU - Sato, Shintaro

AU - Nihei, Mizuhisa

AU - Kajita, Akihiro

AU - Sakai, Tadashi

AU - Awano, Yuji

PY - 2011/5

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AB - We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier layer. The top electrode formation with good coverage on CNTs reduces contact resistance. The current-voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in variousdiameter via holes.

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Improvement in electrical properties of carbon nanotube via interconnects

Abstract

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