Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

K. Iwata; P. Fons; S. Niki; A. Yamada; K. Matsubara; K. Nakahara; H. Takasu

doi:10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7

Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

K. Iwata, P. Fons, S. Niki, A. Yamada, K. Matsubara, K. Nakahara, H. Takasu

Research output: Contribution to journal › Conference article › peer-review

49 Citations (Scopus)

Abstract

We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm²/Vs and electron concentrations of 7 × 10¹⁶ cm^-3 were grown.

Original language	English
Pages (from-to)	287-292
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	180
Issue number	1
DOIs	https://doi.org/10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7
Publication status	Published - 2000 Jul 1
Externally published	Yes
Event	3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger Duration: 2000 Mar 6 → 2000 Mar 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7

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Cite this

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abstract = "We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.",

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T1 - Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

AU - Iwata, K.

AU - Fons, P.

AU - Niki, S.

AU - Yamada, A.

AU - Matsubara, K.

AU - Nakahara, K.

AU - Takasu, H.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.

AB - We grew high quality ZnO crystal on a-plane sapphire substrates by RS(radical source)-MBE. Oxygen polarity (-c) ZnO, which has a flat and smooth surface, was obtained under Zn rich conditions at the initial growth of low temperature buffer layer. High Zn flux is required to grow ZnO at high temperature and form the -c polarity. The high temperature ZnO growth has made possible the improvement of ZnO electrical properties. ZnO epilayers with electron mobilities of 120 cm2/Vs and electron concentrations of 7 × 1016 cm-3 were grown.

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