Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering

Yoshio Abe, Satoko Shinkai, Katsutaka Sasaki, Jiwang Yan, Kouki Maekawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Thin films of noble metals are considered to be important materials for microelectronics applications. In this study, Ru thin films were deposited on SiO2/Si substrates by RF magnetron sputtering using a mixture of Ar and O2 gases, and the effects of O2 flow ratio, substrate temperature and film thickness on the crystal orientation and surface roughness of the films were studied. Single orientation (001) Ru thin films were formed under appropriate conditions, such as O2 flow ratios lower than that required for RuO2 formation and high substrate temperatures. A minimum full-width at half-maximum of 1.2° was obtained for the rocking curve of the Ru (002) X-ray diffraction peak. The average surface roughness (Ra) of the single orientation films was estimated to be approximately 1 nm by atomic force microscopy. The oxygen introduced during sputtering was thought to play a role as a surfactant.

Original languageEnglish
Pages (from-to)277-280
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number1
Publication statusPublished - 2004 Jan
Externally publishedYes

Fingerprint

Crystal orientation
Sputtering
surface roughness
roughness
sputtering
Surface roughness
Thin films
Oxygen
oxygen
Substrates
thin films
crystals
Precious metals
Full width at half maximum
noble metals
microelectronics
Microelectronics
Magnetron sputtering
Film thickness
Atomic force microscopy

Keywords

  • Crystal orientation
  • Rocking curve
  • Ru
  • Sputtering
  • Surface roughness
  • Surfactant
  • X-ray diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering. / Abe, Yoshio; Shinkai, Satoko; Sasaki, Katsutaka; Yan, Jiwang; Maekawa, Kouki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 1, 01.2004, p. 277-280.

Research output: Contribution to journalArticle

@article{779c4ec904ec4ad8a57b0b24b13f9448,
title = "Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering",
abstract = "Thin films of noble metals are considered to be important materials for microelectronics applications. In this study, Ru thin films were deposited on SiO2/Si substrates by RF magnetron sputtering using a mixture of Ar and O2 gases, and the effects of O2 flow ratio, substrate temperature and film thickness on the crystal orientation and surface roughness of the films were studied. Single orientation (001) Ru thin films were formed under appropriate conditions, such as O2 flow ratios lower than that required for RuO2 formation and high substrate temperatures. A minimum full-width at half-maximum of 1.2° was obtained for the rocking curve of the Ru (002) X-ray diffraction peak. The average surface roughness (Ra) of the single orientation films was estimated to be approximately 1 nm by atomic force microscopy. The oxygen introduced during sputtering was thought to play a role as a surfactant.",
keywords = "Crystal orientation, Rocking curve, Ru, Sputtering, Surface roughness, Surfactant, X-ray diffraction",
author = "Yoshio Abe and Satoko Shinkai and Katsutaka Sasaki and Jiwang Yan and Kouki Maekawa",
year = "2004",
month = "1",
language = "English",
volume = "43",
pages = "277--280",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "1",

}

TY - JOUR

T1 - Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering

AU - Abe, Yoshio

AU - Shinkai, Satoko

AU - Sasaki, Katsutaka

AU - Yan, Jiwang

AU - Maekawa, Kouki

PY - 2004/1

Y1 - 2004/1

N2 - Thin films of noble metals are considered to be important materials for microelectronics applications. In this study, Ru thin films were deposited on SiO2/Si substrates by RF magnetron sputtering using a mixture of Ar and O2 gases, and the effects of O2 flow ratio, substrate temperature and film thickness on the crystal orientation and surface roughness of the films were studied. Single orientation (001) Ru thin films were formed under appropriate conditions, such as O2 flow ratios lower than that required for RuO2 formation and high substrate temperatures. A minimum full-width at half-maximum of 1.2° was obtained for the rocking curve of the Ru (002) X-ray diffraction peak. The average surface roughness (Ra) of the single orientation films was estimated to be approximately 1 nm by atomic force microscopy. The oxygen introduced during sputtering was thought to play a role as a surfactant.

AB - Thin films of noble metals are considered to be important materials for microelectronics applications. In this study, Ru thin films were deposited on SiO2/Si substrates by RF magnetron sputtering using a mixture of Ar and O2 gases, and the effects of O2 flow ratio, substrate temperature and film thickness on the crystal orientation and surface roughness of the films were studied. Single orientation (001) Ru thin films were formed under appropriate conditions, such as O2 flow ratios lower than that required for RuO2 formation and high substrate temperatures. A minimum full-width at half-maximum of 1.2° was obtained for the rocking curve of the Ru (002) X-ray diffraction peak. The average surface roughness (Ra) of the single orientation films was estimated to be approximately 1 nm by atomic force microscopy. The oxygen introduced during sputtering was thought to play a role as a surfactant.

KW - Crystal orientation

KW - Rocking curve

KW - Ru

KW - Sputtering

KW - Surface roughness

KW - Surfactant

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=1842659245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842659245&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:1842659245

VL - 43

SP - 277

EP - 280

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -