Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

K. Iwata; T. Sakemi; A. Yamada; P. Fons; K. Awai; T. Yamamoto; S. Shirakata; K. Matsubara; H. Tampo; K. Sakurai; S. Ishizuka; S. Niki

doi:10.1016/j.tsf.2004.11.072

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, S. Shirakata, K. Matsubara, H. Tampo, K. Sakurai, S. Ishizuka, S. Niki

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm²/Vsec) was observed and the lowest resistivity (2.0×10^-4 Ω cm) film was obtained from large size grown ZnO TCO of 200×200 mm at low growth temperature of 200 °C with high growth rate of 24 μm/h.

Original language	English
Pages (from-to)	199-203
Number of pages	5
Journal	Thin Solid Films
Volume	480-481
DOIs	https://doi.org/10.1016/j.tsf.2004.11.072
Publication status	Published - 2005 Jun 1
Externally published	Yes

Keywords

High growth rate
II-VI
Ion plating
Large size
Transparent conductive oxide
Zinc oxide
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.tsf.2004.11.072

Cite this

@article{f223e29b44d94cef91fefd7db4ebfa59,

title = "Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)",

abstract = "Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm2/Vsec) was observed and the lowest resistivity (2.0×10-4 Ω cm) film was obtained from large size grown ZnO TCO of 200×200 mm at low growth temperature of 200 °C with high growth rate of 24 μm/h.",

keywords = "High growth rate, II-VI, Ion plating, Large size, Transparent conductive oxide, Zinc oxide, ZnO",

author = "K. Iwata and T. Sakemi and A. Yamada and P. Fons and K. Awai and T. Yamamoto and S. Shirakata and K. Matsubara and H. Tampo and K. Sakurai and S. Ishizuka and S. Niki",

note = "Funding Information: The authors would like to thank Prof. S. Shirakata, Prof. K. Yoshino, Prof. T. Ikari, Dr. T. Yajima, Dr. T. Nagase, Dr. T. Terasako, Dr. K. Nishida and Prof. T. Nakata for useful discussions. This research was sponsored the Shikoku consortium grant from the Ministry of Economy, Trade and Industry.",

year = "2005",

month = jun,

day = "1",

doi = "10.1016/j.tsf.2004.11.072",

language = "English",

volume = "480-481",

pages = "199--203",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

AU - Iwata, K.

AU - Sakemi, T.

AU - Yamada, A.

AU - Fons, P.

AU - Awai, K.

AU - Yamamoto, T.

AU - Shirakata, S.

AU - Matsubara, K.

AU - Tampo, H.

AU - Sakurai, K.

AU - Ishizuka, S.

AU - Niki, S.

N1 - Funding Information: The authors would like to thank Prof. S. Shirakata, Prof. K. Yoshino, Prof. T. Ikari, Dr. T. Yajima, Dr. T. Nagase, Dr. T. Terasako, Dr. K. Nishida and Prof. T. Nakata for useful discussions. This research was sponsored the Shikoku consortium grant from the Ministry of Economy, Trade and Industry.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm2/Vsec) was observed and the lowest resistivity (2.0×10-4 Ω cm) film was obtained from large size grown ZnO TCO of 200×200 mm at low growth temperature of 200 °C with high growth rate of 24 μm/h.

AB - Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high growth rates. Ga-doped zinc oxide (ZnO) thin film was grown on a moving glass substrate by RPD. Evaporation of very small quantity of tungsten from anode electrode by plasma collision lets the resistivity of grown ZnO transparent conductive oxide (TCO) film to increase. However, no reduction of carrier concentration was observed but only reduction of carrier mobility. It indicates that reduction of evaporation of tungsten from anode electrode induces increase of carrier mobility without any increase of carrier concentration. After installation of an anode cooling system in order to avoid the tungsten evaporation, increase of the mobility (37 cm2/Vsec) was observed and the lowest resistivity (2.0×10-4 Ω cm) film was obtained from large size grown ZnO TCO of 200×200 mm at low growth temperature of 200 °C with high growth rate of 24 μm/h.

KW - High growth rate

KW - II-VI

KW - Ion plating

KW - Large size

KW - Transparent conductive oxide

KW - Zinc oxide

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=21044446239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21044446239&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.11.072

DO - 10.1016/j.tsf.2004.11.072

M3 - Article

AN - SCOPUS:21044446239

SN - 0040-6090

VL - 480-481

SP - 199

EP - 203

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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