Impurity Bands in Group-IV Semiconductors

Mikio Eto, H. Kamimura

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this chapter, we describe how the impurity band in group-IV semiconductors is a fascinating subject in condensed matter physics and it manifests a rich diversified physics. After surveying the transport phenomena in the impurity band, metal-insulator transitions, and historical development of the localization theory, we discuss in particular how the electron-electron interactions play an important role in producing anomalous properties, such as peculiar spin-dependent phenomena in specific heat, spin susceptibility, magnetoresistance, etc., in the Anderson-localized regime just in the insulating side of metal-insulator transitions. The most part of chapter is devoted to explaining the theoretical development to treat the interplay of disorder and electron-electron interactions in the Anderson-localized regime of the impurity band. The readers can learn how these theories decipher the origins of various mysterious phenomena which the impurity band exhibits.

Original languageEnglish
Title of host publicationComprehensive Semiconductor Science and Technology
PublisherElsevier Inc.
Pages77-112
Number of pages36
Volume1-6
ISBN (Print)9780444531537
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Eto, M., & Kamimura, H. (2011). Impurity Bands in Group-IV Semiconductors. In Comprehensive Semiconductor Science and Technology (Vol. 1-6, pp. 77-112). Elsevier Inc.. https://doi.org/10.1016/B978-0-44-453153-7.00049-3