In situ deposition rate monitoring during the three-stage-growth process of Cu(In,Ga)Se2 absorber films

Ralf Hunger; Keiichiro Sakurai; Akimasa Yamada; Paul Fons; Kakuya Iwata; Koji Matsubara; Shigeru Niki

doi:10.1016/S0040-6090(03)00234-7

In situ deposition rate monitoring during the three-stage-growth process of Cu(In,Ga)Se₂ absorber films

Ralf Hunger, Keiichiro Sakurai, Akimasa Yamada, Paul Fons, Kakuya Iwata, Koji Matsubara, Shigeru Niki

Research output: Contribution to journal › Conference article › peer-review

22 Citations (Scopus)

Abstract

The controllability of the three-stage-growth process of Cu(In,Ga)Se₂ films was investigated, implementing two different substrate temperature monitoring channels simultaneously: (a) a thermocouple at the rear side of the substrate, and (b) a pyrometer, measuring the emission of heat radiation from the front surface of the growing film. By this setup not only the film composition, i.e. the relative incorporation rate of Cu and group III elements, but as well the absolute growth rate can be monitored on-line during growth. The heat radiation intensity during the first growth stage (deposition of (In,Ga)₂Se₃ precursor films) exhibits characteristic oscillations. The oscillation period is inversely proportional to the growth rate. The oscillations are caused by thickness interference effects of black body radiation within the growing film. By a simulation of the infrared emissivity, the refractive index n_igs = 2.9 and absorption coefficient k_igs = 0.2 of the growing film could be extracted. Employing our process, Mo/CIGS/CdS/ZnO/Al solar cells with an efficiency up to 16.4% could be realized.

Original language	English
Pages (from-to)	16-21
Number of pages	6
Journal	Thin Solid Films
Volume	431-432
DOIs	https://doi.org/10.1016/S0040-6090(03)00234-7
Publication status	Published - 2003 May 1
Externally published	Yes
Event	Proceedings of Symposium B - Strasbourg, France Duration: 2002 Jun 18 → 2002 Jun 21

Keywords

Copper indium-gallium selenide
Deposition process control
Optical properties
Solar cells
Three-stage-process

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(03)00234-7

Cite this

@article{447e96ddf1984904b5f37557ba8b1fba,

title = "In situ deposition rate monitoring during the three-stage-growth process of Cu(In,Ga)Se2 absorber films",

abstract = "The controllability of the three-stage-growth process of Cu(In,Ga)Se2 films was investigated, implementing two different substrate temperature monitoring channels simultaneously: (a) a thermocouple at the rear side of the substrate, and (b) a pyrometer, measuring the emission of heat radiation from the front surface of the growing film. By this setup not only the film composition, i.e. the relative incorporation rate of Cu and group III elements, but as well the absolute growth rate can be monitored on-line during growth. The heat radiation intensity during the first growth stage (deposition of (In,Ga)2Se3 precursor films) exhibits characteristic oscillations. The oscillation period is inversely proportional to the growth rate. The oscillations are caused by thickness interference effects of black body radiation within the growing film. By a simulation of the infrared emissivity, the refractive index nigs = 2.9 and absorption coefficient kigs = 0.2 of the growing film could be extracted. Employing our process, Mo/CIGS/CdS/ZnO/Al solar cells with an efficiency up to 16.4% could be realized.",

keywords = "Copper indium-gallium selenide, Deposition process control, Optical properties, Solar cells, Three-stage-process",

author = "Ralf Hunger and Keiichiro Sakurai and Akimasa Yamada and Paul Fons and Kakuya Iwata and Koji Matsubara and Shigeru Niki",

note = "Funding Information: The first introduction into the practical aspects of multi-stage-growth by S. Nishiwaki, and the support by T. Negami and Y. Hashimoto (Matsushita Electric Ind. Co.) in completing and measuring the solar cell devices are gratefully acknowledged. R.H. was granted a fellowship from the Science and Technology Agency, MITI. ; Proceedings of Symposium B ; Conference date: 18-06-2002 Through 21-06-2002",

year = "2003",

month = may,

day = "1",

doi = "10.1016/S0040-6090(03)00234-7",

language = "English",

volume = "431-432",

pages = "16--21",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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TY - JOUR

T1 - In situ deposition rate monitoring during the three-stage-growth process of Cu(In,Ga)Se2 absorber films

AU - Hunger, Ralf

AU - Sakurai, Keiichiro

AU - Yamada, Akimasa

AU - Fons, Paul

AU - Iwata, Kakuya

AU - Matsubara, Koji

AU - Niki, Shigeru

N1 - Funding Information: The first introduction into the practical aspects of multi-stage-growth by S. Nishiwaki, and the support by T. Negami and Y. Hashimoto (Matsushita Electric Ind. Co.) in completing and measuring the solar cell devices are gratefully acknowledged. R.H. was granted a fellowship from the Science and Technology Agency, MITI.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The controllability of the three-stage-growth process of Cu(In,Ga)Se2 films was investigated, implementing two different substrate temperature monitoring channels simultaneously: (a) a thermocouple at the rear side of the substrate, and (b) a pyrometer, measuring the emission of heat radiation from the front surface of the growing film. By this setup not only the film composition, i.e. the relative incorporation rate of Cu and group III elements, but as well the absolute growth rate can be monitored on-line during growth. The heat radiation intensity during the first growth stage (deposition of (In,Ga)2Se3 precursor films) exhibits characteristic oscillations. The oscillation period is inversely proportional to the growth rate. The oscillations are caused by thickness interference effects of black body radiation within the growing film. By a simulation of the infrared emissivity, the refractive index nigs = 2.9 and absorption coefficient kigs = 0.2 of the growing film could be extracted. Employing our process, Mo/CIGS/CdS/ZnO/Al solar cells with an efficiency up to 16.4% could be realized.

AB - The controllability of the three-stage-growth process of Cu(In,Ga)Se2 films was investigated, implementing two different substrate temperature monitoring channels simultaneously: (a) a thermocouple at the rear side of the substrate, and (b) a pyrometer, measuring the emission of heat radiation from the front surface of the growing film. By this setup not only the film composition, i.e. the relative incorporation rate of Cu and group III elements, but as well the absolute growth rate can be monitored on-line during growth. The heat radiation intensity during the first growth stage (deposition of (In,Ga)2Se3 precursor films) exhibits characteristic oscillations. The oscillation period is inversely proportional to the growth rate. The oscillations are caused by thickness interference effects of black body radiation within the growing film. By a simulation of the infrared emissivity, the refractive index nigs = 2.9 and absorption coefficient kigs = 0.2 of the growing film could be extracted. Employing our process, Mo/CIGS/CdS/ZnO/Al solar cells with an efficiency up to 16.4% could be realized.

KW - Copper indium-gallium selenide

KW - Deposition process control

KW - Optical properties

KW - Solar cells

KW - Three-stage-process

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VL - 431-432

SP - 16

EP - 21

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium B

Y2 - 18 June 2002 through 21 June 2002

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