In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates

Genki Yoshikawa, Tetsuhiko Miyadera, Ryo Onoki, Keiji Ueno, Ikuyo Nakai, Shiro Entani, Susumu Ikeda, Dong Guo, Manabu Kiguchi, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.

Original languageEnglish
Pages (from-to)2518-2522
Number of pages5
JournalSurface Science
Volume600
Issue number12
DOIs
Publication statusPublished - 2006 Jun 15
Externally publishedYes

Fingerprint

Molecular orientation
Ultrathin films
in situ measurement
X ray absorption
Vacuum
vacuum
Atomic force microscopy
Substrates
fine structure
atomic force microscopy
atmospheres
x rays
preparation
Molecules
pentacene
molecules

Keywords

  • Aromatics
  • Atomic force microscopy
  • In-situ characterization
  • Near edge extended X-ray absorption fine structure (NEXAFS)
  • Pentacene
  • Silicon oxides
  • Surface structure, morphology, roughness and topography
  • Thin film structures

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Yoshikawa, G., Miyadera, T., Onoki, R., Ueno, K., Nakai, I., Entani, S., ... Saiki, K. (2006). In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates. Surface Science, 600(12), 2518-2522. https://doi.org/10.1016/j.susc.2006.04.012

In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates. / Yoshikawa, Genki; Miyadera, Tetsuhiko; Onoki, Ryo; Ueno, Keiji; Nakai, Ikuyo; Entani, Shiro; Ikeda, Susumu; Guo, Dong; Kiguchi, Manabu; Kondoh, Hiroshi; Ohta, Toshiaki; Saiki, Koichiro.

In: Surface Science, Vol. 600, No. 12, 15.06.2006, p. 2518-2522.

Research output: Contribution to journalArticle

Yoshikawa, G, Miyadera, T, Onoki, R, Ueno, K, Nakai, I, Entani, S, Ikeda, S, Guo, D, Kiguchi, M, Kondoh, H, Ohta, T & Saiki, K 2006, 'In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates', Surface Science, vol. 600, no. 12, pp. 2518-2522. https://doi.org/10.1016/j.susc.2006.04.012
Yoshikawa, Genki ; Miyadera, Tetsuhiko ; Onoki, Ryo ; Ueno, Keiji ; Nakai, Ikuyo ; Entani, Shiro ; Ikeda, Susumu ; Guo, Dong ; Kiguchi, Manabu ; Kondoh, Hiroshi ; Ohta, Toshiaki ; Saiki, Koichiro. / In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates. In: Surface Science. 2006 ; Vol. 600, No. 12. pp. 2518-2522.
@article{668b8571e92741cca0f4a58cfbcfa016,
title = "In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates",
abstract = "Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.",
keywords = "Aromatics, Atomic force microscopy, In-situ characterization, Near edge extended X-ray absorption fine structure (NEXAFS), Pentacene, Silicon oxides, Surface structure, morphology, roughness and topography, Thin film structures",
author = "Genki Yoshikawa and Tetsuhiko Miyadera and Ryo Onoki and Keiji Ueno and Ikuyo Nakai and Shiro Entani and Susumu Ikeda and Dong Guo and Manabu Kiguchi and Hiroshi Kondoh and Toshiaki Ohta and Koichiro Saiki",
year = "2006",
month = "6",
day = "15",
doi = "10.1016/j.susc.2006.04.012",
language = "English",
volume = "600",
pages = "2518--2522",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "12",

}

TY - JOUR

T1 - In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates

AU - Yoshikawa, Genki

AU - Miyadera, Tetsuhiko

AU - Onoki, Ryo

AU - Ueno, Keiji

AU - Nakai, Ikuyo

AU - Entani, Shiro

AU - Ikeda, Susumu

AU - Guo, Dong

AU - Kiguchi, Manabu

AU - Kondoh, Hiroshi

AU - Ohta, Toshiaki

AU - Saiki, Koichiro

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.

AB - Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.

KW - Aromatics

KW - Atomic force microscopy

KW - In-situ characterization

KW - Near edge extended X-ray absorption fine structure (NEXAFS)

KW - Pentacene

KW - Silicon oxides

KW - Surface structure, morphology, roughness and topography

KW - Thin film structures

UR - http://www.scopus.com/inward/record.url?scp=33744992043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744992043&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2006.04.012

DO - 10.1016/j.susc.2006.04.012

M3 - Article

VL - 600

SP - 2518

EP - 2522

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 12

ER -