In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates

Genki Yoshikawa, Tetsuhiko Miyadera, Ryo Onoki, Keiji Ueno, Ikuyo Nakai, Shiro Entani, Susumu Ikeda, Dong Guo, Manabu Kiguchi, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki

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23 Citations (Scopus)

Abstract

Molecular orientations of pentacene ultrathin films grown on SiO2 substrates were studied without the influence of the atmosphere by vacuum atomic force microscopy (V-AFM) and near edge X-ray absorption fine structure (NEXAFS). The experimental processes from deposition of pentacene to characterization of films were performed under vacuum condition without exposure to the atmosphere. V-AFM and NEXAFS measurements showed that pentacene molecules tend to grow on SiO2 surface with their molecular long axes perpendicular to the substrate surfaces (standing-mode) irrespective of preparation procedure of SiO2 substrate.

Original languageEnglish
Pages (from-to)2518-2522
Number of pages5
JournalSurface Science
Volume600
Issue number12
DOIs
Publication statusPublished - 2006 Jun 15
Externally publishedYes

Keywords

  • Aromatics
  • Atomic force microscopy
  • In-situ characterization
  • Near edge extended X-ray absorption fine structure (NEXAFS)
  • Pentacene
  • Silicon oxides
  • Surface structure, morphology, roughness and topography
  • Thin film structures

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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  • Cite this

    Yoshikawa, G., Miyadera, T., Onoki, R., Ueno, K., Nakai, I., Entani, S., Ikeda, S., Guo, D., Kiguchi, M., Kondoh, H., Ohta, T., & Saiki, K. (2006). In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates. Surface Science, 600(12), 2518-2522. https://doi.org/10.1016/j.susc.2006.04.012