In Situ Monitoring Technique of Self-Heating in Bulk MOSFETs at Cryogenic Temperatures using Subthreshold Current

Masayuki Ichikawa, Takahisa Tanaka, Ken Uchida, Tomohisa Miyao, Munehiro Tada, Hiroki Ishikuro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work proposes an evaluation technique of self-heating (SH) in a 65-nm bulk CMOS transistor at cryogenic temperature (4.2K). For the in-situ monitoring of self-heating in cryo-CMOS circuits, transient response of the subthreshold drain current is used, which makes it possible to estimate the temperature at on-state of MOSFETs. The relation between the temperature increase by self-heating and power consumption of MOSFET has been experimentally obtained, which will help a design of high performance cryo-CMOS circuits for quantum computer application.

Original languageEnglish
Title of host publication2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665497671
DOIs
Publication statusPublished - 2022
Event2022 IEEE Latin America Electron Devices Conference, LAEDC 2022 - Cancun, Mexico
Duration: 2022 Jul 42022 Jul 6

Publication series

Name2022 IEEE Latin America Electron Devices Conference, LAEDC 2022

Conference

Conference2022 IEEE Latin America Electron Devices Conference, LAEDC 2022
Country/TerritoryMexico
CityCancun
Period22/7/422/7/6

Keywords

  • CMOS
  • cryogenic
  • in-situ monitoring
  • quantum computing
  • self-heating

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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