Incipient Chemical Reaction on the Scratched Silicon {111} Surface with Ethoxy and Hydroxy Groups

Yuriko Saito, Tetsuhiko Isobe, Mamoru Senna

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Incipient reactions on the scratched Si {111} surface with solutions containing KOH, ethanol, and tetraethyl orthosilicate (TEOS) were examined. In situ scratching in the TEOS solution was also carried out for comparison. A remarkable increase in the dangling bond concentration was detected on the scratched silicon surface by ESR. Similar hemispherical gel deposits were observed parallel to the uniformly coated gel film on the scratched sample after etching by an ethanol/KOH solution as well as by in situ etching in an ethanol/TEOS solution. The hemispherical deposition, being localized at the tip of branched cracks where KOH solutions also preferentially attack, indicates that the incipient chemical reaction on the scratched silicon {111} with ethoxy groups preferentially initiates at the crack tip, as a result of siloxane polycondensation after concurrence of competitive adsorption of ethoxy over hydroxy groups at the concentrated dangling bonds.

Original languageEnglish
Pages (from-to)96-100
Number of pages5
JournalJournal of Solid State Chemistry
Volume120
Issue number1
DOIs
Publication statusPublished - 1995 Nov 15

Fingerprint

Silicon
Chemical reactions
chemical reactions
tetraethyl orthosilicate
silicon
Dangling bonds
Ethanol
ethyl alcohol
Etching
Gels
etching
gels
Siloxanes
siloxanes
crack tips
Polycondensation
Crack tips
attack
Paramagnetic resonance
Deposits

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

Cite this

Incipient Chemical Reaction on the Scratched Silicon {111} Surface with Ethoxy and Hydroxy Groups. / Saito, Yuriko; Isobe, Tetsuhiko; Senna, Mamoru.

In: Journal of Solid State Chemistry, Vol. 120, No. 1, 15.11.1995, p. 96-100.

Research output: Contribution to journalArticle

@article{c06c5d50e8244317ab627b447fd06657,
title = "Incipient Chemical Reaction on the Scratched Silicon {111} Surface with Ethoxy and Hydroxy Groups",
abstract = "Incipient reactions on the scratched Si {111} surface with solutions containing KOH, ethanol, and tetraethyl orthosilicate (TEOS) were examined. In situ scratching in the TEOS solution was also carried out for comparison. A remarkable increase in the dangling bond concentration was detected on the scratched silicon surface by ESR. Similar hemispherical gel deposits were observed parallel to the uniformly coated gel film on the scratched sample after etching by an ethanol/KOH solution as well as by in situ etching in an ethanol/TEOS solution. The hemispherical deposition, being localized at the tip of branched cracks where KOH solutions also preferentially attack, indicates that the incipient chemical reaction on the scratched silicon {111} with ethoxy groups preferentially initiates at the crack tip, as a result of siloxane polycondensation after concurrence of competitive adsorption of ethoxy over hydroxy groups at the concentrated dangling bonds.",
author = "Yuriko Saito and Tetsuhiko Isobe and Mamoru Senna",
year = "1995",
month = "11",
day = "15",
doi = "10.1006/jssc.1995.1382",
language = "English",
volume = "120",
pages = "96--100",
journal = "Journal of Solid State Chemistry",
issn = "0022-4596",
publisher = "Academic Press Inc.",
number = "1",

}

TY - JOUR

T1 - Incipient Chemical Reaction on the Scratched Silicon {111} Surface with Ethoxy and Hydroxy Groups

AU - Saito, Yuriko

AU - Isobe, Tetsuhiko

AU - Senna, Mamoru

PY - 1995/11/15

Y1 - 1995/11/15

N2 - Incipient reactions on the scratched Si {111} surface with solutions containing KOH, ethanol, and tetraethyl orthosilicate (TEOS) were examined. In situ scratching in the TEOS solution was also carried out for comparison. A remarkable increase in the dangling bond concentration was detected on the scratched silicon surface by ESR. Similar hemispherical gel deposits were observed parallel to the uniformly coated gel film on the scratched sample after etching by an ethanol/KOH solution as well as by in situ etching in an ethanol/TEOS solution. The hemispherical deposition, being localized at the tip of branched cracks where KOH solutions also preferentially attack, indicates that the incipient chemical reaction on the scratched silicon {111} with ethoxy groups preferentially initiates at the crack tip, as a result of siloxane polycondensation after concurrence of competitive adsorption of ethoxy over hydroxy groups at the concentrated dangling bonds.

AB - Incipient reactions on the scratched Si {111} surface with solutions containing KOH, ethanol, and tetraethyl orthosilicate (TEOS) were examined. In situ scratching in the TEOS solution was also carried out for comparison. A remarkable increase in the dangling bond concentration was detected on the scratched silicon surface by ESR. Similar hemispherical gel deposits were observed parallel to the uniformly coated gel film on the scratched sample after etching by an ethanol/KOH solution as well as by in situ etching in an ethanol/TEOS solution. The hemispherical deposition, being localized at the tip of branched cracks where KOH solutions also preferentially attack, indicates that the incipient chemical reaction on the scratched silicon {111} with ethoxy groups preferentially initiates at the crack tip, as a result of siloxane polycondensation after concurrence of competitive adsorption of ethoxy over hydroxy groups at the concentrated dangling bonds.

UR - http://www.scopus.com/inward/record.url?scp=58149363636&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149363636&partnerID=8YFLogxK

U2 - 10.1006/jssc.1995.1382

DO - 10.1006/jssc.1995.1382

M3 - Article

AN - SCOPUS:58149363636

VL - 120

SP - 96

EP - 100

JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

SN - 0022-4596

IS - 1

ER -