Increased O (1D) metastable density in highly Ar-diluted oxygen plasmas

Takeshi Kitajima, Toshiki Nakano, Toshiaki Makabe

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Enhancement of the growth rate of Si O2 with a rare gas diluted O2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom (D1) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption spectroscopy to detect O (D1) and found a twofold increase in the density of O (D1) due to the dilution with Ar. The density increase is reasonably explained by the increase of the electron density, the oxygen dissociation fraction, and the Ar metastable density, that are experimentally obtained for low O2 fractions.

Original languageEnglish
Article number091501
JournalApplied Physics Letters
Volume88
Issue number9
DOIs
Publication statusPublished - 2006 Feb 27

Fingerprint

oxygen plasma
metastable atoms
microelectronics
dilution
rare gases
oxygen atoms
absorption spectroscopy
optical absorption
activation
dissociation
vacuum
fabrication
augmentation
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Increased O (1D) metastable density in highly Ar-diluted oxygen plasmas. / Kitajima, Takeshi; Nakano, Toshiki; Makabe, Toshiaki.

In: Applied Physics Letters, Vol. 88, No. 9, 091501, 27.02.2006.

Research output: Contribution to journalArticle

Kitajima, Takeshi ; Nakano, Toshiki ; Makabe, Toshiaki. / Increased O (1D) metastable density in highly Ar-diluted oxygen plasmas. In: Applied Physics Letters. 2006 ; Vol. 88, No. 9.
@article{1974d173b5224198a2f0fee0ccb6de9b,
title = "Increased O (1D) metastable density in highly Ar-diluted oxygen plasmas",
abstract = "Enhancement of the growth rate of Si O2 with a rare gas diluted O2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom (D1) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption spectroscopy to detect O (D1) and found a twofold increase in the density of O (D1) due to the dilution with Ar. The density increase is reasonably explained by the increase of the electron density, the oxygen dissociation fraction, and the Ar metastable density, that are experimentally obtained for low O2 fractions.",
author = "Takeshi Kitajima and Toshiki Nakano and Toshiaki Makabe",
year = "2006",
month = "2",
day = "27",
doi = "10.1063/1.2180871",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Increased O (1D) metastable density in highly Ar-diluted oxygen plasmas

AU - Kitajima, Takeshi

AU - Nakano, Toshiki

AU - Makabe, Toshiaki

PY - 2006/2/27

Y1 - 2006/2/27

N2 - Enhancement of the growth rate of Si O2 with a rare gas diluted O2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom (D1) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption spectroscopy to detect O (D1) and found a twofold increase in the density of O (D1) due to the dilution with Ar. The density increase is reasonably explained by the increase of the electron density, the oxygen dissociation fraction, and the Ar metastable density, that are experimentally obtained for low O2 fractions.

AB - Enhancement of the growth rate of Si O2 with a rare gas diluted O2 plasma is of interest for application to various microelectronics fabrications. The key is the oxygen metastable atom (D1) density, which has the potential for surface activation. We used vacuum ultraviolet optical absorption spectroscopy to detect O (D1) and found a twofold increase in the density of O (D1) due to the dilution with Ar. The density increase is reasonably explained by the increase of the electron density, the oxygen dissociation fraction, and the Ar metastable density, that are experimentally obtained for low O2 fractions.

UR - http://www.scopus.com/inward/record.url?scp=33644685629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644685629&partnerID=8YFLogxK

U2 - 10.1063/1.2180871

DO - 10.1063/1.2180871

M3 - Article

AN - SCOPUS:33644685629

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 091501

ER -