Abstract
The photocarrier dynamics of CuIn1-xGaxSe2 (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valance bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.
Original language | English |
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Article number | 181903 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2015 May 4 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)