Influence of channel depletion on the carrier charging characteristics in Si nanocrystal floating gate memory

Ryuji Ohba, Naoharu Sugiyama, Junji Koga, Ken Uchida, Akira Toriumi

Research output: Contribution to journalArticle

12 Citations (Scopus)


The carrier charging/discharging characteristics in a multidot Si nanocrystal floating gate memory are investigated by measuring the gate current directly. To detect a small gate current, we use a large device-size memory. In the gate current characteristics, double peak structures, with one of the peaks at the threshold voltage and the other at the flat-band voltage, are found. The separation into two peaks is shown to be due to the change of the charging/discharging carrier sources between the source/drain and the substrate in the channel depletion region. These show that the carrier charging/discharging characteristics change critically at each of the threshold voltage and the flat-band voltage. Charging/discharging rate reduction due to the surface potential flexibility and the carrier number shortage in the channel depletion region is proposed to explain the critical changes.

Original languageEnglish
Pages (from-to)989-993
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 A
Publication statusPublished - 2000 Dec 1



  • Depletion
  • Direct tunneling
  • Double peak
  • Flat-band voltage
  • Floating gate
  • Memory
  • Nanocrystal
  • Retention
  • Silicon
  • Threshold voltage

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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