Influence of channel depletion on the carrier charging characteristics in Si nanocrystal floating gate memory

Ryuji Ohba, Naoharu Sugiyama, Junji Koga, Ken Uchida, Akira Toriumi

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    The carrier charging/discharging characteristics in a multidot Si nanocrystal floating gate memory are investigated by measuring the gate current directly. To detect a small gate current, we use a large device-size memory. In the gate current characteristics, double peak structures, with one of the peaks at the threshold voltage and the other at the flat-band voltage, are found. The separation into two peaks is shown to be due to the change of the charging/discharging carrier sources between the source/drain and the substrate in the channel depletion region. These show that the carrier charging/discharging characteristics change critically at each of the threshold voltage and the flat-band voltage. Charging/discharging rate reduction due to the surface potential flexibility and the carrier number shortage in the channel depletion region is proposed to explain the critical changes.

    Original languageEnglish
    Pages (from-to)989-993
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume39
    Issue number3 A
    DOIs
    Publication statusPublished - 2000

    Keywords

    • Depletion
    • Direct tunneling
    • Double peak
    • Flat-band voltage
    • Floating gate
    • Memory
    • Nanocrystal
    • Retention
    • Silicon
    • Threshold voltage

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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