Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes

Naoto Sugiyama; Ryota Sawada; Hiroki Tanaka; Fumihiko Kannari

doi:10.1364/CLEO_AT.2017.JW2A.91

Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes

Naoto Sugiyama, Ryota Sawada, Hiroki Tanaka, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.

Original language	English
Title of host publication	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
Volume	2017-January
ISBN (Electronic)	9781943580279
DOIs	https://doi.org/10.1364/CLEO_AT.2017.JW2A.91
Publication status	Published - 2017 Oct 25
Event	2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States Duration: 2017 May 14 → 2017 May 19

Other

Other	2017 Conference on Lasers and Electro-Optics, CLEO 2017
Country	United States
City	San Jose
Period	17/5/14 → 17/5/19

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Instrumentation

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Sugiyama, N., Sawada, R., Tanaka, H., & Kannari, F. (2017). Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91

Influence of crystal's nominal figure of merit on Ti : sapphire laser directly pumped by InGaN laser diodes. / Sugiyama, Naoto; Sawada, Ryota; Tanaka, Hiroki; Kannari, Fumihiko.

2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sugiyama, N, Sawada, R, Tanaka, H & Kannari, F 2017, Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. in 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2017 Conference on Lasers and Electro-Optics, CLEO 2017, San Jose, United States, 17/5/14. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91

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abstract = "We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.",

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