Abstract
We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
| Original language | English |
|---|---|
| Title of host publication | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-2 |
| Number of pages | 2 |
| Volume | 2017-January |
| ISBN (Electronic) | 9781943580279 |
| DOIs | |
| Publication status | Published - 2017 Oct 25 |
| Event | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States Duration: 2017 May 14 → 2017 May 19 |
Other
| Other | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 17/5/14 → 17/5/19 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
Sugiyama, N., Sawada, R., Tanaka, H., & Kannari, F. (2017). Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91