Abstract
We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
| Original language | English |
|---|---|
| Title of host publication | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1-2 |
| Number of pages | 2 |
| Volume | 2017-January |
| ISBN (Electronic) | 9781943580279 |
| DOIs | |
| Publication status | Published - 2017 Oct 25 |
| Event | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States Duration: 2017 May 14 → 2017 May 19 |
Other
| Other | 2017 Conference on Lasers and Electro-Optics, CLEO 2017 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 17/5/14 → 17/5/19 |
Fingerprint
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
Influence of crystal's nominal figure of merit on Ti : sapphire laser directly pumped by InGaN laser diodes. / Sugiyama, Naoto; Sawada, Ryota; Tanaka, Hiroki; Kannari, Fumihiko.
2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Influence of crystal's nominal figure of merit on Ti
T2 - sapphire laser directly pumped by InGaN laser diodes
AU - Sugiyama, Naoto
AU - Sawada, Ryota
AU - Tanaka, Hiroki
AU - Kannari, Fumihiko
PY - 2017/10/25
Y1 - 2017/10/25
N2 - We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
AB - We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.
UR - http://www.scopus.com/inward/record.url?scp=85044215909&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85044215909&partnerID=8YFLogxK
U2 - 10.1364/CLEO_AT.2017.JW2A.91
DO - 10.1364/CLEO_AT.2017.JW2A.91
M3 - Conference contribution
AN - SCOPUS:85020400392
VL - 2017-January
SP - 1
EP - 2
BT - 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -