Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes

Naoto Sugiyama, Ryota Sawada, Hiroki Tanaka, Fumihiko Kannari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.

    Original languageEnglish
    Title of host publication2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1-2
    Number of pages2
    Volume2017-January
    ISBN (Electronic)9781943580279
    DOIs
    Publication statusPublished - 2017 Oct 25
    Event2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
    Duration: 2017 May 142017 May 19

    Other

    Other2017 Conference on Lasers and Electro-Optics, CLEO 2017
    CountryUnited States
    CitySan Jose
    Period17/5/1417/5/19

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials
    • Instrumentation

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    Sugiyama, N., Sawada, R., Tanaka, H., & Kannari, F. (2017). Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91