Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes

Naoto Sugiyama, Ryota Sawada, Hiroki Tanaka, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally confirm a pump-induced loss in a Ti:sapphire laser pumped by 451- or 478-nm laser diode. Such loss is significant even for a crystal producing better output performance at 520-nm pumping. We demonstrate a power scaling of a CW Ti:sapphire laser using two 520-nm green diodes and two 478-nm blue diodes, and obtained an output power of 593 mW at an absorbed pump power of 2.5 W.

Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
Volume2017-January
ISBN (Electronic)9781943580279
DOIs
Publication statusPublished - 2017 Oct 25
Event2017 Conference on Lasers and Electro-Optics, CLEO 2017 - San Jose, United States
Duration: 2017 May 142017 May 19

Other

Other2017 Conference on Lasers and Electro-Optics, CLEO 2017
CountryUnited States
CitySan Jose
Period17/5/1417/5/19

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Sugiyama, N., Sawada, R., Tanaka, H., & Kannari, F. (2017). Influence of crystal's nominal figure of merit on Ti: sapphire laser directly pumped by InGaN laser diodes. In 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings (Vol. 2017-January, pp. 1-2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/CLEO_AT.2017.JW2A.91