Influence of electron-phonon interaction on Fano resonance in Aharonov-Bohm interferometer

Akiko Ueda, Mikio Eto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We theoretically study the effect of electron-phonon (e-ph) interaction on a Fano resonance in an Aharonov-Bohm interferometer with an embedded quantum dot. We examine the bias-voltage (V) dependence of the decoherence, using Keldysh Green function method and perturbation with respect to e-ph interaction. With optical phonons of energy ω0, only the elastic process takes place when eV < ω0, in which electrons emit and absorb phonons virtually. The process suppresses the resonant amplitude. When eV > ω0, the inelastic process is possible which is accompaniedby real emission of phonons. It results in the dephasing and broadens the resonant width. With acoustic phonons, the asymmetric shape of the Fano resonance grows like a symmetric one as the bias voltage increases, in qualitative accordance with experimental results.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages839-840
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

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Keywords

  • Aharonov-Bohm interferometer
  • Decoherence
  • Electron-phonon interaction
  • Fano resonance
  • Keldysh Green function
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ueda, A., & Eto, M. (2007). Influence of electron-phonon interaction on Fano resonance in Aharonov-Bohm interferometer. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 839-840). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730152