TY - GEN
T1 - Influence of electron-phonon interaction on Fano resonance in Aharonov-Bohm interferometer
AU - Ueda, Akiko
AU - Eto, Mikio
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We theoretically study the effect of electron-phonon (e-ph) interaction on a Fano resonance in an Aharonov-Bohm interferometer with an embedded quantum dot. We examine the bias-voltage (V) dependence of the decoherence, using Keldysh Green function method and perturbation with respect to e-ph interaction. With optical phonons of energy ω0, only the elastic process takes place when eV < ω0, in which electrons emit and absorb phonons virtually. The process suppresses the resonant amplitude. When eV > ω0, the inelastic process is possible which is accompaniedby real emission of phonons. It results in the dephasing and broadens the resonant width. With acoustic phonons, the asymmetric shape of the Fano resonance grows like a symmetric one as the bias voltage increases, in qualitative accordance with experimental results.
AB - We theoretically study the effect of electron-phonon (e-ph) interaction on a Fano resonance in an Aharonov-Bohm interferometer with an embedded quantum dot. We examine the bias-voltage (V) dependence of the decoherence, using Keldysh Green function method and perturbation with respect to e-ph interaction. With optical phonons of energy ω0, only the elastic process takes place when eV < ω0, in which electrons emit and absorb phonons virtually. The process suppresses the resonant amplitude. When eV > ω0, the inelastic process is possible which is accompaniedby real emission of phonons. It results in the dephasing and broadens the resonant width. With acoustic phonons, the asymmetric shape of the Fano resonance grows like a symmetric one as the bias voltage increases, in qualitative accordance with experimental results.
KW - Aharonov-Bohm interferometer
KW - Decoherence
KW - Electron-phonon interaction
KW - Fano resonance
KW - Keldysh Green function
KW - Quantum dot
UR - http://www.scopus.com/inward/record.url?scp=77958477647&partnerID=8YFLogxK
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U2 - 10.1063/1.2730152
DO - 10.1063/1.2730152
M3 - Conference contribution
AN - SCOPUS:77958477647
SN - 9780735403970
T3 - AIP Conference Proceedings
SP - 839
EP - 840
BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006
Y2 - 24 July 2006 through 28 July 2006
ER -