Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz

Toshiaki Makabe, Fumiyoshi Tochikubo, Motoho Nishimura

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

New experimental evidence of the plasma structure has been presented in the rf glow discharge in SiH4 at 13.56 MHz by spatiotemporal emission spectroscopy. Theoretical estimation by the relaxation continuum model strongly supports the accumulative effect of the negative ion, SiHn-, by the electron attachment in the bulk plasma due to the potential barriers in the positive-ion sheath on the discharge structure.

Original languageEnglish
Pages (from-to)3674-3677
Number of pages4
JournalPhysical Review A
Volume42
Issue number6
DOIs
Publication statusPublished - 1990

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glow discharges
negative ions
ion sheaths
electron attachment
positive ions
continuums
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz. / Makabe, Toshiaki; Tochikubo, Fumiyoshi; Nishimura, Motoho.

In: Physical Review A, Vol. 42, No. 6, 1990, p. 3674-3677.

Research output: Contribution to journalArticle

Makabe, Toshiaki ; Tochikubo, Fumiyoshi ; Nishimura, Motoho. / Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz. In: Physical Review A. 1990 ; Vol. 42, No. 6. pp. 3674-3677.
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