Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz

Toshiaki Makabe; Fumiyoshi Tochikubo; Motoho Nishimura

doi:10.1103/PhysRevA.42.3674

Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz

Toshiaki Makabe, Fumiyoshi Tochikubo, Motoho Nishimura

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Abstract

New experimental evidence of the plasma structure has been presented in the rf glow discharge in SiH4 at 13.56 MHz by spatiotemporal emission spectroscopy. Theoretical estimation by the relaxation continuum model strongly supports the accumulative effect of the negative ion, SiHn-, by the electron attachment in the bulk plasma due to the potential barriers in the positive-ion sheath on the discharge structure.

Original language	English
Pages (from-to)	3674-3677
Number of pages	4
Journal	Physical Review A
Volume	42
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevA.42.3674
Publication status	Published - 1990 Jan 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1103/PhysRevA.42.3674

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title = "Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz",

abstract = "New experimental evidence of the plasma structure has been presented in the rf glow discharge in SiH4 at 13.56 MHz by spatiotemporal emission spectroscopy. Theoretical estimation by the relaxation continuum model strongly supports the accumulative effect of the negative ion, SiHn-, by the electron attachment in the bulk plasma due to the potential barriers in the positive-ion sheath on the discharge structure.",

author = "Toshiaki Makabe and Fumiyoshi Tochikubo and Motoho Nishimura",

year = "1990",

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AU - Nishimura, Motoho

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Y1 - 1990/1/1

N2 - New experimental evidence of the plasma structure has been presented in the rf glow discharge in SiH4 at 13.56 MHz by spatiotemporal emission spectroscopy. Theoretical estimation by the relaxation continuum model strongly supports the accumulative effect of the negative ion, SiHn-, by the electron attachment in the bulk plasma due to the potential barriers in the positive-ion sheath on the discharge structure.

AB - New experimental evidence of the plasma structure has been presented in the rf glow discharge in SiH4 at 13.56 MHz by spatiotemporal emission spectroscopy. Theoretical estimation by the relaxation continuum model strongly supports the accumulative effect of the negative ion, SiHn-, by the electron attachment in the bulk plasma due to the potential barriers in the positive-ion sheath on the discharge structure.

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Influence of negative ions in rf glow discharges in SiH4 at 13.56 MHz

Abstract

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