Influence of non-linear effects on very short pMOSFET device performances

Patrice Houlet, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.

Original languageEnglish
Pages (from-to)572-574
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

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velocity distribution
saturation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Influence of non-linear effects on very short pMOSFET device performances. / Houlet, Patrice; Awano, Yuji; Yokoyama, Naoki.

In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 572-574.

Research output: Contribution to journalArticle

Houlet, Patrice ; Awano, Yuji ; Yokoyama, Naoki. / Influence of non-linear effects on very short pMOSFET device performances. In: Physica B: Condensed Matter. 1999 ; Vol. 272, No. 1-4. pp. 572-574.
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