Influence of non-linear effects on very short pMOSFET device performances

Patrice Houlet, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

By using simple models, we have studied the influence of non-linear like phenomena on very short pMOSFET drivability. We show that the low-field region of the channel acts as a bottleneck for the determination of the on-current. The low-field mobility and medium-field velocity in the beginning of the channel strongly modify the saturation current. In addition, modifications of the high-field transport (>300 kV/cm) in the last 30% of the channel are negligible for the 50 nm pMOSFET drivability, at VG = -1.2 V and for all drain biases.

Original languageEnglish
Pages (from-to)572-574
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 1999 Jul 191999 Jul 23

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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