Influence of quantum confinement effects on single electron and single hole transistors

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

Influences of quantum confinement effects on the device characteristics of single electron and single hole transistors are studied using Si narrow channel MOSFETs with both p+ and n+ source/drain contacts. Numerical calculations of the energy spectrum in silicon quantum dots are also carried out to support the experimental results. The obtained results indicate the difficulty in predicting the peak positions of the Coulomb blockade oscillations due to the quantum confinement effects in nano-scale devices. For the application of SETs, a new method to adjust the peak position by injecting charges into silicon nano-crystals or traps is proposed and demonstrated.

Original languageEnglish
Pages (from-to)119-122
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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