Influence of quantum confinement effects on single electron and single hole transistors

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Influences of quantum confinement effects on the device characteristics of single electron and single hole transistors are studied using Si narrow channel MOSFETs with both p+ and n+ source/drain contacts. Numerical calculations of the energy spectrum in silicon quantum dots are also carried out to support the experimental results. The obtained results indicate the difficulty in predicting the peak positions of the Coulomb blockade oscillations due to the quantum confinement effects in nano-scale devices. For the application of SETs, a new method to adjust the peak position by injecting charges into silicon nano-crystals or traps is proposed and demonstrated.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherIEEE
Pages119-122
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1998 Dec 61998 Dec 9

Other

OtherProceedings of the 1998 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period98/12/698/12/9

Fingerprint

Quantum confinement
Transistors
Coulomb blockade
Silicon
Electrons
Semiconductor quantum dots
Crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ishikuro, H., & Hiramoto, T. (1998). Influence of quantum confinement effects on single electron and single hole transistors. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 119-122). IEEE.

Influence of quantum confinement effects on single electron and single hole transistors. / Ishikuro, Hiroki; Hiramoto, Toshiro.

Technical Digest - International Electron Devices Meeting. ed. / Anon. IEEE, 1998. p. 119-122.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishikuro, H & Hiramoto, T 1998, Influence of quantum confinement effects on single electron and single hole transistors. in Anon (ed.), Technical Digest - International Electron Devices Meeting. IEEE, pp. 119-122, Proceedings of the 1998 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 98/12/6.
Ishikuro H, Hiramoto T. Influence of quantum confinement effects on single electron and single hole transistors. In Anon, editor, Technical Digest - International Electron Devices Meeting. IEEE. 1998. p. 119-122
Ishikuro, Hiroki ; Hiramoto, Toshiro. / Influence of quantum confinement effects on single electron and single hole transistors. Technical Digest - International Electron Devices Meeting. editor / Anon. IEEE, 1998. pp. 119-122
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