InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

Yoshiki Sakuma, Masashi Shima, Yuji Awano, Yoshiro Sugiyama, Toshiro Futatsugi, Naoki Yokoyama, Kazuhito Uchida, Noboru Miura, Takashi Sekiguchi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.

Original languageEnglish
Pages (from-to)466-480
Number of pages15
JournalJournal of Electronic Materials
Volume28
Issue number5
Publication statusPublished - 1999 May
Externally publishedYes

Fingerprint

recesses
Metallorganic chemical vapor deposition
Semiconductor quantum dots
metalorganic chemical vapor deposition
quantum dots
Optical properties
optical properties
Indium
gallium arsenide
controllability
Materials science
materials science
Controllability
indium
Photoluminescence
chemical composition
photoluminescence
Data storage equipment
Fabrication
fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Sakuma, Y., Shima, M., Awano, Y., Sugiyama, Y., Futatsugi, T., Yokoyama, N., ... Sekiguchi, T. (1999). InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition. Journal of Electronic Materials, 28(5), 466-480.

InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition. / Sakuma, Yoshiki; Shima, Masashi; Awano, Yuji; Sugiyama, Yoshiro; Futatsugi, Toshiro; Yokoyama, Naoki; Uchida, Kazuhito; Miura, Noboru; Sekiguchi, Takashi.

In: Journal of Electronic Materials, Vol. 28, No. 5, 05.1999, p. 466-480.

Research output: Contribution to journalArticle

Sakuma, Y, Shima, M, Awano, Y, Sugiyama, Y, Futatsugi, T, Yokoyama, N, Uchida, K, Miura, N & Sekiguchi, T 1999, 'InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition', Journal of Electronic Materials, vol. 28, no. 5, pp. 466-480.
Sakuma, Yoshiki ; Shima, Masashi ; Awano, Yuji ; Sugiyama, Yoshiro ; Futatsugi, Toshiro ; Yokoyama, Naoki ; Uchida, Kazuhito ; Miura, Noboru ; Sekiguchi, Takashi. / InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 5. pp. 466-480.
@article{3f89a6063cd64ca68ce89d4908776519,
title = "InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition",
abstract = "Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.",
author = "Yoshiki Sakuma and Masashi Shima and Yuji Awano and Yoshiro Sugiyama and Toshiro Futatsugi and Naoki Yokoyama and Kazuhito Uchida and Noboru Miura and Takashi Sekiguchi",
year = "1999",
month = "5",
language = "English",
volume = "28",
pages = "466--480",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

TY - JOUR

T1 - InGaAs quantum dots formed in tetrahedral-shaped recesses on GaAs (111)B grown by metalorganic chemical vapor deposition

AU - Sakuma, Yoshiki

AU - Shima, Masashi

AU - Awano, Yuji

AU - Sugiyama, Yoshiro

AU - Futatsugi, Toshiro

AU - Yokoyama, Naoki

AU - Uchida, Kazuhito

AU - Miura, Noboru

AU - Sekiguchi, Takashi

PY - 1999/5

Y1 - 1999/5

N2 - Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.

AB - Novel semiconductor quantum dots (QDs), grown in tetrahedral-shaped recesses (TSRs) formed on a (111)B GaAs substrate, are described from both material science and device application points of view. After explaining the fabrication procedure for TSRs, growth of InGaAs QDs and their optical properties are explained. It is revealed that an InGaAs QD of indium-rich chemical composition is formed spontaneously at the bottom of each TSR. The mechanism of the QD formation is discussed in detail. It is proved from magneto-photoluminescence that the QDs actually have optical properties peculiar to zero-dimensional confinement. Several experimental results indicating excellent growth controllability of the QDs are presented. Finally, recent challenges to apply the QDs to electronic memory devices are reported. Two kinds of devices, where the position of individual QD is artificially controlled, are proposed for the first time and the preliminary experimental results are explained.

UR - http://www.scopus.com/inward/record.url?scp=0032640193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032640193&partnerID=8YFLogxK

M3 - Article

VL - 28

SP - 466

EP - 480

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -