InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology

Yuji Awano, Yoshiki Sakuma, Yoshihiro Sugiyama, Takashi Sekiguchi, Shunichi Muto, Naoki Yokoyama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper discusses our newly developed technology for making GaAs/InGaAs/GaAs Tetrahedral-Shaped Recess (TSR) quantum dots. The heterostructures were grown by low-pressure MOVPE in tetrahedral-shaped recesses created on a (111)B oriented GaAs substrate using anisotropic chemical etching. We examined these structures by using cathodoluminescence (CL) measurements, and observed lower energy emissions from the bottoms of, and higher energy emissions from the walls of the TSRs. This suggests carrier confinement at the bottoms with the lowest potential energy. We carried out microanlaysis of the structures by using TEM and EDX, and found an In-rich region that had grown vertically from the bottom of the TSR with a (111)B-like bond configuration. We also measured a smaller diamagnetic shift of the lower energy photoluminecscence (PL) peak in the structure. Based on these results, we have concluded that the quantum dots are formed at the bottoms of TSRs, mainly because of the dependence of InAs composition on the local crystalline structure in this system. We also studied the lateral distribution and vertical alignment of TSR quantum dots by CL and PL measurements respectively. The advantages of TSR quantum dot technology can be summarized as follows: (i) better control in dot positioning in the lateral direction, (ii) realization of dot sizes exceeding limitations posed by lithography, (iii) high uniformity of dot size, and (iv) vertical alignment of quantum dots.

Original languageEnglish
Pages (from-to)1557-1560
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE79-C
Issue number11
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Cathodoluminescence
Metallorganic vapor phase epitaxy
Potential energy
Lithography
Heterojunctions
Energy dispersive spectroscopy
Etching
gallium arsenide
Crystalline materials
Transmission electron microscopy
Substrates
Chemical analysis

Keywords

  • Cathodoluminescence
  • MOVPE
  • Nanometer technology
  • Photoluminescence
  • Quantum dot
  • Self-organization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Awano, Y., Sakuma, Y., Sugiyama, Y., Sekiguchi, T., Muto, S., & Yokoyama, N. (1996). InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology. IEICE Transactions on Electronics, E79-C(11), 1557-1560.

InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology. / Awano, Yuji; Sakuma, Yoshiki; Sugiyama, Yoshihiro; Sekiguchi, Takashi; Muto, Shunichi; Yokoyama, Naoki.

In: IEICE Transactions on Electronics, Vol. E79-C, No. 11, 1996, p. 1557-1560.

Research output: Contribution to journalArticle

Awano, Y, Sakuma, Y, Sugiyama, Y, Sekiguchi, T, Muto, S & Yokoyama, N 1996, 'InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology', IEICE Transactions on Electronics, vol. E79-C, no. 11, pp. 1557-1560.
Awano Y, Sakuma Y, Sugiyama Y, Sekiguchi T, Muto S, Yokoyama N. InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology. IEICE Transactions on Electronics. 1996;E79-C(11):1557-1560.
Awano, Yuji ; Sakuma, Yoshiki ; Sugiyama, Yoshihiro ; Sekiguchi, Takashi ; Muto, Shunichi ; Yokoyama, Naoki. / InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology. In: IEICE Transactions on Electronics. 1996 ; Vol. E79-C, No. 11. pp. 1557-1560.
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