TY - JOUR
T1 - InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact
AU - Tamura, K.
AU - Nakahara, K.
AU - Sakai, M.
AU - Nakagawa, D.
AU - Ito, N.
AU - Sonobe, M.
AU - Takasu, H.
AU - Tampo, H.
AU - Fons, P.
AU - Matsubara, K.
AU - Iwata, K.
AU - Yamada, A.
AU - Niki, S.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/9
Y1 - 2004/9
N2 - Ga-doped ZnO (ZnO: Ga) was fabricated by molecular-beam epitaxy to employ as highly transparent contact electrode on p-GaN layer. ZnO: Ga films have higher transparency in near uv and blue wavelength range than the conventional Ni/Au oxidized alloy p-electrode. The as-deposited ZnO: Ga p-electrodes worked as ohmic contacts for the p-GaN layers without any kind of post annealing processes. The optical power of InGaN light-emitting diode (LED) fabricated with ZnO:Gap-contact was doubled compared to that with Ni/Au p-electrode. The LED chips with ZnO: Ga were operated at forward current of 20 mA in the environment of temperature of 121°C, humidity of 85%, and pressure of 1.6 atm. The tested LED has lifetime of 80 and more hours in this environment.
AB - Ga-doped ZnO (ZnO: Ga) was fabricated by molecular-beam epitaxy to employ as highly transparent contact electrode on p-GaN layer. ZnO: Ga films have higher transparency in near uv and blue wavelength range than the conventional Ni/Au oxidized alloy p-electrode. The as-deposited ZnO: Ga p-electrodes worked as ohmic contacts for the p-GaN layers without any kind of post annealing processes. The optical power of InGaN light-emitting diode (LED) fabricated with ZnO:Gap-contact was doubled compared to that with Ni/Au p-electrode. The LED chips with ZnO: Ga were operated at forward current of 20 mA in the environment of temperature of 121°C, humidity of 85%, and pressure of 1.6 atm. The tested LED has lifetime of 80 and more hours in this environment.
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U2 - 10.1002/pssa.200405090
DO - 10.1002/pssa.200405090
M3 - Article
AN - SCOPUS:7044224627
SN - 0031-8965
VL - 201
SP - 2704
EP - 2707
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 12
ER -