InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact

K. Tamura, K. Nakahara, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, S. Niki

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