InGaN diode pumped actively Q-switched intracavity frequency doubling Pr

LiYF<inf>4</inf>261 nm laser

Junichiro Kojou, Ryo Abe, Ryosuke Kariyama, Hiroki Tanaka, Akira Sakurai, Yojiro Watanabe, Fumihiko Kannari

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF<inf>4</inf>laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.

Original languageEnglish
Pages (from-to)2030-2036
Number of pages7
JournalApplied Optics
Issue number10
DOIs
Publication statusPublished - 2014 Apr 1

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Ultraviolet lasers
Harmonic generation
Conversion efficiency
Semiconductor lasers
Diodes
diodes
Lasers
pulses
ultraviolet lasers
lasers
harmonic generations
pulse duration
semiconductor lasers
predictions
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

InGaN diode pumped actively Q-switched intracavity frequency doubling Pr : LiYF<inf>4</inf>261 nm laser. / Kojou, Junichiro; Abe, Ryo; Kariyama, Ryosuke; Tanaka, Hiroki; Sakurai, Akira; Watanabe, Yojiro; Kannari, Fumihiko.

In: Applied Optics, No. 10, 01.04.2014, p. 2030-2036.

Research output: Contribution to journalArticle

Kojou, Junichiro ; Abe, Ryo ; Kariyama, Ryosuke ; Tanaka, Hiroki ; Sakurai, Akira ; Watanabe, Yojiro ; Kannari, Fumihiko. / InGaN diode pumped actively Q-switched intracavity frequency doubling Pr : LiYF<inf>4</inf>261 nm laser. In: Applied Optics. 2014 ; No. 10. pp. 2030-2036.
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