InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF4261 nm laser

Junichiro Kojou, Ryo Abe, Ryosuke Kariyama, Hiroki Tanaka, Akira Sakurai, Yojiro Watanabe, Fumihiko Kannari

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF4laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.

Original languageEnglish
Pages (from-to)2030-2036
Number of pages7
JournalApplied Optics
Issue number10
DOIs
Publication statusPublished - 2014 Apr 1

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF<sub>4</sub>261 nm laser'. Together they form a unique fingerprint.

  • Cite this