InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF4261 nm laser

Junichiro Kojou; Ryo Abe; Ryosuke Kariyama; Hiroki Tanaka; Akira Sakurai; Yojiro Watanabe; Fumihiko Kannari

doi:10.1364/AO.53.002030

InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF₄261 nm laser

Junichiro Kojou, Ryo Abe, Ryosuke Kariyama, Hiroki Tanaka, Akira Sakurai, Yojiro Watanabe, Fumihiko Kannari

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF₄laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.

Original language	English
Pages (from-to)	2030-2036
Number of pages	7
Journal	Applied Optics
Issue number	10
DOIs	https://doi.org/10.1364/AO.53.002030
Publication status	Published - 2014 Apr 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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@article{bf66a13f0ea24107b1eb47ae8773421e,

title = "InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF4261 nm laser",

abstract = "We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF4laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.",

author = "Junichiro Kojou and Ryo Abe and Ryosuke Kariyama and Hiroki Tanaka and Akira Sakurai and Yojiro Watanabe and Fumihiko Kannari",

note = "Publisher Copyright: {\textcopyright} 2014 Optical Society of America.",

year = "2014",

month = apr,

day = "1",

doi = "10.1364/AO.53.002030",

language = "English",

pages = "2030--2036",

journal = "Applied Optics",

issn = "1559-128X",

publisher = "The Optical Society",

number = "10",

}

TY - JOUR

T1 - InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF4261 nm laser

AU - Kojou, Junichiro

AU - Abe, Ryo

AU - Kariyama, Ryosuke

AU - Tanaka, Hiroki

AU - Sakurai, Akira

AU - Watanabe, Yojiro

AU - Kannari, Fumihiko

PY - 2014/4/1

Y1 - 2014/4/1

N2 - We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF4laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.

AB - We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF4laser. We obtain a maximum peak power of 61.6 W (8.7 μJ/pulse at 7.7 kHz) and 594 W (19.0 μJ/pulse at 7.7 kHz) with a pulse width of 142 and 35 ns at 261 and 320 nm, respectively. The conversion efficiency from the fundamental laser energy at 639 nm to the second-harmonic generation is 88%. Good agreement is obtained with prediction by a rate equation model.

UR - http://www.scopus.com/inward/record.url?scp=84942365224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942365224&partnerID=8YFLogxK

U2 - 10.1364/AO.53.002030

DO - 10.1364/AO.53.002030

M3 - Article

AN - SCOPUS:84942365224

SN - 1559-128X

SP - 2030

EP - 2036

JO - Applied Optics

JF - Applied Optics

IS - 10

ER -

InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF₄261 nm laser

Abstract

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