Initial oxidation of GaAs(100) under near-realistic environments revealed by: In situ AP-XPS

Ryo Toyoshima; Shunya Murakami; Shinsuke Eguchi; Kenta Amemiya; Kazuhiko Mase; Hiroshi Kondoh

doi:10.1039/d0cc05279e

Initial oxidation of GaAs(100) under near-realistic environments revealed by: In situ AP-XPS

Ryo Toyoshima, Shunya Murakami, Shinsuke Eguchi, Kenta Amemiya, Kazuhiko Mase, Hiroshi Kondoh

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation. This journal is

Original language	English
Pages (from-to)	14905-14908
Number of pages	4
Journal	Chemical Communications
Volume	56
Issue number	94
DOIs	https://doi.org/10.1039/d0cc05279e
Publication status	Published - 2020 Dec 7

ASJC Scopus subject areas

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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AU - Mase, Kazuhiko

AU - Kondoh, Hiroshi

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