Initial oxidation of GaAs(100) under near-realistic environments revealed by: In situ AP-XPS

Ryo Toyoshima, Shunya Murakami, Shinsuke Eguchi, Kenta Amemiya, Kazuhiko Mase, Hiroshi Kondoh

Research output: Contribution to journalArticlepeer-review

Abstract

In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation. This journal is

Original languageEnglish
Pages (from-to)14905-14908
Number of pages4
JournalChemical Communications
Volume56
Issue number94
DOIs
Publication statusPublished - 2020 Dec 7

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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