Abstract
In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation. This journal is
Original language | English |
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Pages (from-to) | 14905-14908 |
Number of pages | 4 |
Journal | Chemical Communications |
Volume | 56 |
Issue number | 94 |
DOIs | |
Publication status | Published - 2020 Dec 7 |
ASJC Scopus subject areas
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry