Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng; E. Ohta; M. Sakata

doi:10.1063/1.98941

Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng, E. Ohta, M. Sakata

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Abstract

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level E_a (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

Original language	English
Pages (from-to)	2206-2207
Number of pages	2
Journal	Applied Physics Letters
Volume	51
Issue number	26
DOIs	https://doi.org/10.1063/1.98941
Publication status	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.98941

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@article{25688d27dc2747a7a0d7e21dfc6a1619,

title = "Interaction between radiation-induced defects and the Pt-related center in silicon",

abstract = "The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.",

author = "Weng, {Y. M.} and E. Ohta and M. Sakata",

year = "1987",

doi = "10.1063/1.98941",

language = "English",

volume = "51",

pages = "2206--2207",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Interaction between radiation-induced defects and the Pt-related center in silicon

AU - Weng, Y. M.

AU - Ohta, E.

AU - Sakata, M.

PY - 1987

Y1 - 1987

N2 - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

AB - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

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U2 - 10.1063/1.98941

DO - 10.1063/1.98941

M3 - Article

AN - SCOPUS:36549104065

VL - 51

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EP - 2207

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -

Interaction between radiation-induced defects and the Pt-related center in silicon

Abstract

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