Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng, E. Ohta, M. Sakata

Research output: Contribution to journalArticle

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Abstract

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

Original languageEnglish
Pages (from-to)2206-2207
Number of pages2
JournalApplied Physics Letters
Volume51
Issue number26
DOIs
Publication statusPublished - 1987

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defects
silicon
radiation
interactions
electron irradiation
platinum
irradiation
annealing
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Interaction between radiation-induced defects and the Pt-related center in silicon. / Weng, Y. M.; Ohta, E.; Sakata, M.

In: Applied Physics Letters, Vol. 51, No. 26, 1987, p. 2206-2207.

Research output: Contribution to journalArticle

Weng, Y. M. ; Ohta, E. ; Sakata, M. / Interaction between radiation-induced defects and the Pt-related center in silicon. In: Applied Physics Letters. 1987 ; Vol. 51, No. 26. pp. 2206-2207.
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