Interaction between radiation-induced defects and the Pt-related center in silicon

Y. M. Weng, E. Ohta, M. Sakata

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

Original languageEnglish
Pages (from-to)2206-2207
Number of pages2
JournalApplied Physics Letters
Volume51
Issue number26
DOIs
Publication statusPublished - 1987

Fingerprint

defects
silicon
radiation
interactions
electron irradiation
platinum
irradiation
annealing
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Interaction between radiation-induced defects and the Pt-related center in silicon. / Weng, Y. M.; Ohta, E.; Sakata, M.

In: Applied Physics Letters, Vol. 51, No. 26, 1987, p. 2206-2207.

Research output: Contribution to journal › Article

Weng, YM, Ohta, E & Sakata, M 1987, 'Interaction between radiation-induced defects and the Pt-related center in silicon', Applied Physics Letters, vol. 51, no. 26, pp. 2206-2207. https://doi.org/10.1063/1.98941
Weng YM, Ohta E, Sakata M. Interaction between radiation-induced defects and the Pt-related center in silicon. Applied Physics Letters. 1987;51(26):2206-2207. https://doi.org/10.1063/1.98941
Weng, Y. M. ; Ohta, E. ; Sakata, M. / Interaction between radiation-induced defects and the Pt-related center in silicon. In: Applied Physics Letters. 1987 ; Vol. 51, No. 26. pp. 2206-2207.
@article{25688d27dc2747a7a0d7e21dfc6a1619,
title = "Interaction between radiation-induced defects and the Pt-related center in silicon",
abstract = "The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.",
author = "Weng, {Y. M.} and E. Ohta and M. Sakata",
year = "1987",
doi = "10.1063/1.98941",
language = "English",
volume = "51",
pages = "2206--2207",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

TY - JOUR

T1 - Interaction between radiation-induced defects and the Pt-related center in silicon

AU - Weng, Y. M.

AU - Ohta, E.

AU - Sakata, M.

PY - 1987

Y1 - 1987

N2 - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

AB - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.

UR - http://www.scopus.com/inward/record.url?scp=36549104065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549104065&partnerID=8YFLogxK

U2 - 10.1063/1.98941

DO - 10.1063/1.98941

M3 - Article

AN - SCOPUS:36549104065

VL - 51

SP - 2206

EP - 2207

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -

Access to Document