Abstract
The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.
| Original language | English |
|---|---|
| Pages (from-to) | 2206-2207 |
| Number of pages | 2 |
| Journal | Applied Physics Letters |
| Volume | 51 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 1987 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Weng, Y. M., Ohta, E., & Sakata, M. (1987). Interaction between radiation-induced defects and the Pt-related center in silicon. Applied Physics Letters, 51(26), 2206-2207. https://doi.org/10.1063/1.98941