TY - JOUR
T1 - Interaction between radiation-induced defects and the Pt-related center in silicon
AU - Weng, Y. M.
AU - Ohta, E.
AU - Sakata, M.
N1 - Copyright:
Copyright 2007 Elsevier B.V., All rights reserved.
PY - 1987
Y1 - 1987
N2 - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.
AB - The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.
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U2 - 10.1063/1.98941
DO - 10.1063/1.98941
M3 - Article
AN - SCOPUS:36549104065
VL - 51
SP - 2206
EP - 2207
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
ER -