Abstract
The interaction of Pt with electron irradiation induced defects has been observed. Platinum in silicon increases irradiation-induced defects remarkably, especially of the A center, and lowers the annealing temperature to 220-140°C for the A and E centers, respectively. The level Ea (0.23) in the Pt-doped silicon is the Pt(-/0) level, an acceptor like the A center.
Original language | English |
---|---|
Pages (from-to) | 2206-2207 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 51 |
Issue number | 26 |
DOIs | |
Publication status | Published - 1987 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)