TY - JOUR
T1 - Interface induced inverse spin Hall effect in bismuth/permalloy bilayer
AU - Hou, Dazhi
AU - Qiu, Z.
AU - Harii, K.
AU - Kajiwara, Y.
AU - Uchida, K.
AU - Fujikawa, Y.
AU - Nakayama, H.
AU - Yoshino, T.
AU - An, T.
AU - Ando, K.
AU - Jin, Xiaofeng
AU - Saitoh, E.
N1 - Funding Information:
The authors thank to J. P. Heremans for valuable discussions. This work was supported by a Grant-in-Aid for Scientific Research A (21244058), the global COE for the “Materials Integration International Centre of Education and Research,” all from MEXT, Japan, and Fundamental Research Grants from CREST-JST “Creation of Nanosystems with Novel Functions through Process Integration”, PRESTO-JST, TRF, and TUIAREO, Japan.
PY - 2012/7/23
Y1 - 2012/7/23
N2 - Inverse spin Hall effect has been investigated in bismuth(Bi)/permalloy(Py) bilayer films by using the spin pumping at room temperature. From the ferromagnetic-resonance-spectrum linewidth data, Bi is proved to be a good spin sink in our structure. We measured inverse spin Hall voltage and conductance of the Bi/Py bilayer and found that the inverse spin Hall current, I c, decreases with increasing the Bi thickness, which is in contrast to the former understanding in similar bilayer systems, e.g., Pt/Py. We constructed a model to explain the thickness dependence of I c quantitatively, in which spin transport modulation near Bi/Py interface is considered.
AB - Inverse spin Hall effect has been investigated in bismuth(Bi)/permalloy(Py) bilayer films by using the spin pumping at room temperature. From the ferromagnetic-resonance-spectrum linewidth data, Bi is proved to be a good spin sink in our structure. We measured inverse spin Hall voltage and conductance of the Bi/Py bilayer and found that the inverse spin Hall current, I c, decreases with increasing the Bi thickness, which is in contrast to the former understanding in similar bilayer systems, e.g., Pt/Py. We constructed a model to explain the thickness dependence of I c quantitatively, in which spin transport modulation near Bi/Py interface is considered.
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U2 - 10.1063/1.4738786
DO - 10.1063/1.4738786
M3 - Article
AN - SCOPUS:84864429122
SN - 0003-6951
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 042403
ER -