Interface induced inverse spin Hall effect in bismuth/permalloy bilayer

Dazhi Hou, Z. Qiu, K. Harii, Y. Kajiwara, K. Uchida, Y. Fujikawa, H. Nakayama, T. Yoshino, T. An, Kazuya Ando, Xiaofeng Jin, E. Saitoh

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Inverse spin Hall effect has been investigated in bismuth(Bi)/permalloy(Py) bilayer films by using the spin pumping at room temperature. From the ferromagnetic-resonance-spectrum linewidth data, Bi is proved to be a good spin sink in our structure. We measured inverse spin Hall voltage and conductance of the Bi/Py bilayer and found that the inverse spin Hall current, I c, decreases with increasing the Bi thickness, which is in contrast to the former understanding in similar bilayer systems, e.g., Pt/Py. We constructed a model to explain the thickness dependence of I c quantitatively, in which spin transport modulation near Bi/Py interface is considered.

Original languageEnglish
Article number042403
JournalApplied Physics Letters
Volume101
Issue number4
DOIs
Publication statusPublished - 2012 Jul 23
Externally publishedYes

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Permalloys (trademark)
bismuth
Hall effect
Hall currents
ferromagnetic resonance
sinks
pumping
modulation
electric potential
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hou, D., Qiu, Z., Harii, K., Kajiwara, Y., Uchida, K., Fujikawa, Y., ... Saitoh, E. (2012). Interface induced inverse spin Hall effect in bismuth/permalloy bilayer. Applied Physics Letters, 101(4), [042403]. https://doi.org/10.1063/1.4738786

Interface induced inverse spin Hall effect in bismuth/permalloy bilayer. / Hou, Dazhi; Qiu, Z.; Harii, K.; Kajiwara, Y.; Uchida, K.; Fujikawa, Y.; Nakayama, H.; Yoshino, T.; An, T.; Ando, Kazuya; Jin, Xiaofeng; Saitoh, E.

In: Applied Physics Letters, Vol. 101, No. 4, 042403, 23.07.2012.

Research output: Contribution to journalArticle

Hou, D, Qiu, Z, Harii, K, Kajiwara, Y, Uchida, K, Fujikawa, Y, Nakayama, H, Yoshino, T, An, T, Ando, K, Jin, X & Saitoh, E 2012, 'Interface induced inverse spin Hall effect in bismuth/permalloy bilayer', Applied Physics Letters, vol. 101, no. 4, 042403. https://doi.org/10.1063/1.4738786
Hou D, Qiu Z, Harii K, Kajiwara Y, Uchida K, Fujikawa Y et al. Interface induced inverse spin Hall effect in bismuth/permalloy bilayer. Applied Physics Letters. 2012 Jul 23;101(4). 042403. https://doi.org/10.1063/1.4738786
Hou, Dazhi ; Qiu, Z. ; Harii, K. ; Kajiwara, Y. ; Uchida, K. ; Fujikawa, Y. ; Nakayama, H. ; Yoshino, T. ; An, T. ; Ando, Kazuya ; Jin, Xiaofeng ; Saitoh, E. / Interface induced inverse spin Hall effect in bismuth/permalloy bilayer. In: Applied Physics Letters. 2012 ; Vol. 101, No. 4.
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