Interface induced inverse spin Hall effect in bismuth/permalloy bilayer

Dazhi Hou, Z. Qiu, K. Harii, Y. Kajiwara, K. Uchida, Y. Fujikawa, H. Nakayama, T. Yoshino, T. An, K. Ando, Xiaofeng Jin, E. Saitoh

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Abstract

Inverse spin Hall effect has been investigated in bismuth(Bi)/permalloy(Py) bilayer films by using the spin pumping at room temperature. From the ferromagnetic-resonance-spectrum linewidth data, Bi is proved to be a good spin sink in our structure. We measured inverse spin Hall voltage and conductance of the Bi/Py bilayer and found that the inverse spin Hall current, I c, decreases with increasing the Bi thickness, which is in contrast to the former understanding in similar bilayer systems, e.g., Pt/Py. We constructed a model to explain the thickness dependence of I c quantitatively, in which spin transport modulation near Bi/Py interface is considered.

Original languageEnglish
Article number042403
JournalApplied Physics Letters
Volume101
Issue number4
DOIs
Publication statusPublished - 2012 Jul 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hou, D., Qiu, Z., Harii, K., Kajiwara, Y., Uchida, K., Fujikawa, Y., Nakayama, H., Yoshino, T., An, T., Ando, K., Jin, X., & Saitoh, E. (2012). Interface induced inverse spin Hall effect in bismuth/permalloy bilayer. Applied Physics Letters, 101(4), [042403]. https://doi.org/10.1063/1.4738786