Combined oxygen and heat exposure processes after p-CuGaSe2/n-CdS junction formation degrade CuGaSe2 solar cell efficiency, whereas such annealing processes can improve high In content Cu(In,Ga)Se2 device performance. This result is chiefly attributable to different interface structures consisting of oxygen-sensitive CuGaSe2 or relatively oxygen-insensitive Cu(In,Ga)Se2. To reduce CuGaSe2 interfacial recombination, reduction of the process temperature of the front contact layer deposition process is found to be the key. In this work, fill factor values exceeding 0.7 are reproducibly obtained from CuGaSe2 solar cells, though such high fill factor values have been very challenging to demonstrate to date using CuGaSe2 photoabsorber layers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)