Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

K. Shinoda; E. Ohta

doi:10.1063/1.108111

Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

K. Shinoda, E. Ohta

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A new electron trap at E_c-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

Original language	English
Pages (from-to)	2691-2693
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	22
DOIs	https://doi.org/10.1063/1.108111
Publication status	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.108111

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title = "Interstitial carbon-oxygen complex in near threshold electron irradiated silicon",

abstract = "A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.",

author = "K. Shinoda and E. Ohta",

year = "1992",

doi = "10.1063/1.108111",

language = "English",

volume = "61",

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journal = "Applied Physics Letters",

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T1 - Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

AU - Shinoda, K.

AU - Ohta, E.

PY - 1992

Y1 - 1992

N2 - A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

AB - A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

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U2 - 10.1063/1.108111

DO - 10.1063/1.108111

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

Abstract

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