Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

K. Shinoda, E. Ohta

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

Original languageEnglish
Pages (from-to)2691-2693
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number22
DOIs
Publication statusPublished - 1992

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interstitials
thresholds
carbon
silicon
oxygen
defects
electrons
fluence
traps
annealing
room temperature
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Interstitial carbon-oxygen complex in near threshold electron irradiated silicon. / Shinoda, K.; Ohta, E.

In: Applied Physics Letters, Vol. 61, No. 22, 1992, p. 2691-2693.

Research output: Contribution to journalArticle

Shinoda, K. ; Ohta, E. / Interstitial carbon-oxygen complex in near threshold electron irradiated silicon. In: Applied Physics Letters. 1992 ; Vol. 61, No. 22. pp. 2691-2693.
@article{d7d54a60d31b4d6a8f983ca6f3bdb0e6,
title = "Interstitial carbon-oxygen complex in near threshold electron irradiated silicon",
abstract = "A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.",
author = "K. Shinoda and E. Ohta",
year = "1992",
doi = "10.1063/1.108111",
language = "English",
volume = "61",
pages = "2691--2693",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Interstitial carbon-oxygen complex in near threshold electron irradiated silicon

AU - Shinoda, K.

AU - Ohta, E.

PY - 1992

Y1 - 1992

N2 - A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

AB - A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

UR - http://www.scopus.com/inward/record.url?scp=0013453999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0013453999&partnerID=8YFLogxK

U2 - 10.1063/1.108111

DO - 10.1063/1.108111

M3 - Article

AN - SCOPUS:0013453999

VL - 61

SP - 2691

EP - 2693

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -