Intrinsic- and extrinsic-defect formation in silica glasses by radiation

Hiroaki Imai, Hiroshi Hirashima

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

The dose dependence of the defect concentration produced by radiation was studied for many types of silica glass in order to discuss the contribution of 'extrinsic' and 'intrinsic' processes to the paramagnetic defect formation. A linearly increasing concentration of paramagnetic defects with dose accompanied by a saturating tendency is observed for the 'extrinsic' defect formation due to transformation of pre-existing precursors. The concentration of E′ centers substantially equals that of non-bridging oxygen hole centers, and both are approximately proportional to the square-root of the accumulated dose for the 'intrinsic' defect formation involving cleavage of the SiO network. Since the dose dependence of the defects is independent of the incident photon energy, electron-hole pairs having the band gap energy of silica are implied to have an essential role for either 'extrinsic' or 'intrinsic' defect formation.

Original languageEnglish
Pages (from-to)202-213
Number of pages12
JournalJournal of Non-Crystalline Solids
Volume179
Issue numberC
DOIs
Publication statusPublished - 1994 Nov 4

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silica glass
Fused silica
Radiation
Defects
defects
radiation
dosage
Silicon Dioxide
Dosimetry
cleavage
tendencies
Energy gap
Photons
Silica
Oxygen
silicon dioxide
Electrons
photons
oxygen

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Intrinsic- and extrinsic-defect formation in silica glasses by radiation. / Imai, Hiroaki; Hirashima, Hiroshi.

In: Journal of Non-Crystalline Solids, Vol. 179, No. C, 04.11.1994, p. 202-213.

Research output: Contribution to journalArticle

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