Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes

E. Ohta, K. Kakishita, H. Y. Lee, Tetsuya Sato, M. Sakata

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Defect levels in n-type Si Schottky barrier diodes made by resistive evaporation have been investigated by deep level transient spectroscopy. Three defect levels are observed at 0.16, 0.14, and 0.12 eV below the conduction band. The concentrations of the defect levels exponentially decrease into the substrate. The defects are introduced during etching process rather than evaporation process. The concentration of the defects increase with the thickness of the layer removed by etching before Schottky metal deposition, and decrease with the etching rate. This suggests that the defect levels are produced near the surface and are driven into the substrate during etching processes.

Original languageEnglish
Pages (from-to)3928-3932
Number of pages5
JournalJournal of Applied Physics
Volume65
Issue number10
DOIs
Publication statusPublished - 1989

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Schottky diodes
defects
etching
evaporation
conduction bands
metals
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes. / Ohta, E.; Kakishita, K.; Lee, H. Y.; Sato, Tetsuya; Sakata, M.

In: Journal of Applied Physics, Vol. 65, No. 10, 1989, p. 3928-3932.

Research output: Contribution to journalArticle

Ohta, E. ; Kakishita, K. ; Lee, H. Y. ; Sato, Tetsuya ; Sakata, M. / Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes. In: Journal of Applied Physics. 1989 ; Vol. 65, No. 10. pp. 3928-3932.
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