Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes

Eiji Ohta, K. Kakishita, H. Y. Lee, T. Sato, M. Sakata

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Introduction of defect levels in resistive-evaporated n-Si Schottky barrier diodes'. Together they form a unique fingerprint.

Physics & Astronomy