Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

H. Uenohara, K. Tateno, T. Kagawa, Y. Ohiso, Hiroyuki Tsuda, T. Kurokawa, C. Amano

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Abstract

The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

Original languageEnglish
Pages (from-to)45-46
Number of pages2
JournalElectronics Letters
Volume35
Issue number1
Publication statusPublished - 1999 Jan 7
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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