Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

H. Uenohara; K. Tateno; T. Kagawa; Y. Ohiso; H. Tsuda; T. Kurokawa; C. Amano

doi:10.1049/el:19990034

Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

H. Uenohara, K. Tateno, T. Kagawa, Y. Ohiso, H. Tsuda, T. Kurokawa, C. Amano

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

Original language	English
Pages (from-to)	45-46
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1049/el:19990034
Publication status	Published - 1999 Jan 7
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19990034

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abstract = "The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.",

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AU - Uenohara, H.

AU - Tateno, K.

AU - Kagawa, T.

AU - Ohiso, Y.

AU - Tsuda, H.

AU - Kurokawa, T.

AU - Amano, C.

PY - 1999/1/7

Y1 - 1999/1/7

N2 - The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

AB - The data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

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Investigation of data transmission characteristics of polarisation-controlled 850nm GaAs-based VCSELs grown on (311)B substrates

Abstract

ASJC Scopus subject areas

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