Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator

Shinji Tanida, Kei Noda, Hiroshi Kawabata, Kazumi Matsushige

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Electron trapping behavior at the interface between N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) film and thermal SiO2 was investigated by utilizing ultrathin poly(methyl methacrylate) (PMMA) gate passivation layers. From the capacitance-voltage analysis for the PTCDI-C13/PMMA/SiO2 interface, it is found that the electron tunneling appeared with PMMA thinner than 0.8 nm, and that the thickness of the gate passivation layer should be at least 1 nm for preventing injection-type hysteresis in the capacitance-voltage curve. The effective electron mobility of organic thin-film transistors (OTFTs) based on PTCDI-C13 with SiO2 gate insulator was increased by suppressing shallow-level interface traps on SiO2 with the PMMA layer, which can be partially accounted for by the multiple trap and release model. In this work, the thickness and the density of the PMMA layers were precisely controlled with a simple spin-coating process. Even 1.3-nm thick PMMA layer caused the improvements of the electron mobility and the air stability of the n-channel conduction.

Original languageEnglish
Pages (from-to)1574-1578
Number of pages5
JournalSynthetic Metals
Volume160
Issue number13-14
DOIs
Publication statusPublished - 2010 Jul
Externally publishedYes

Fingerprint

Polymethyl Methacrylate
Thin film transistors
Polymethyl methacrylates
polymethyl methacrylate
Passivation
passivity
Polymers
transistors
trapping
insulators
Electrons
polymers
thin films
electrons
Electron mobility
electron mobility
Capacitance
capacitance
Perylene
traps

Keywords

  • Air stability
  • Electron trap
  • Gate passivation layer
  • n-Channel operation
  • Organic thin-film transistor

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator. / Tanida, Shinji; Noda, Kei; Kawabata, Hiroshi; Matsushige, Kazumi.

In: Synthetic Metals, Vol. 160, No. 13-14, 07.2010, p. 1574-1578.

Research output: Contribution to journalArticle

@article{5719cec7ae564a6db7b98cb7dd379707,
title = "Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator",
abstract = "Electron trapping behavior at the interface between N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) film and thermal SiO2 was investigated by utilizing ultrathin poly(methyl methacrylate) (PMMA) gate passivation layers. From the capacitance-voltage analysis for the PTCDI-C13/PMMA/SiO2 interface, it is found that the electron tunneling appeared with PMMA thinner than 0.8 nm, and that the thickness of the gate passivation layer should be at least 1 nm for preventing injection-type hysteresis in the capacitance-voltage curve. The effective electron mobility of organic thin-film transistors (OTFTs) based on PTCDI-C13 with SiO2 gate insulator was increased by suppressing shallow-level interface traps on SiO2 with the PMMA layer, which can be partially accounted for by the multiple trap and release model. In this work, the thickness and the density of the PMMA layers were precisely controlled with a simple spin-coating process. Even 1.3-nm thick PMMA layer caused the improvements of the electron mobility and the air stability of the n-channel conduction.",
keywords = "Air stability, Electron trap, Gate passivation layer, n-Channel operation, Organic thin-film transistor",
author = "Shinji Tanida and Kei Noda and Hiroshi Kawabata and Kazumi Matsushige",
year = "2010",
month = "7",
doi = "10.1016/j.synthmet.2010.05.027",
language = "English",
volume = "160",
pages = "1574--1578",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "13-14",

}

TY - JOUR

T1 - Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator

AU - Tanida, Shinji

AU - Noda, Kei

AU - Kawabata, Hiroshi

AU - Matsushige, Kazumi

PY - 2010/7

Y1 - 2010/7

N2 - Electron trapping behavior at the interface between N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) film and thermal SiO2 was investigated by utilizing ultrathin poly(methyl methacrylate) (PMMA) gate passivation layers. From the capacitance-voltage analysis for the PTCDI-C13/PMMA/SiO2 interface, it is found that the electron tunneling appeared with PMMA thinner than 0.8 nm, and that the thickness of the gate passivation layer should be at least 1 nm for preventing injection-type hysteresis in the capacitance-voltage curve. The effective electron mobility of organic thin-film transistors (OTFTs) based on PTCDI-C13 with SiO2 gate insulator was increased by suppressing shallow-level interface traps on SiO2 with the PMMA layer, which can be partially accounted for by the multiple trap and release model. In this work, the thickness and the density of the PMMA layers were precisely controlled with a simple spin-coating process. Even 1.3-nm thick PMMA layer caused the improvements of the electron mobility and the air stability of the n-channel conduction.

AB - Electron trapping behavior at the interface between N,N′-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C13) film and thermal SiO2 was investigated by utilizing ultrathin poly(methyl methacrylate) (PMMA) gate passivation layers. From the capacitance-voltage analysis for the PTCDI-C13/PMMA/SiO2 interface, it is found that the electron tunneling appeared with PMMA thinner than 0.8 nm, and that the thickness of the gate passivation layer should be at least 1 nm for preventing injection-type hysteresis in the capacitance-voltage curve. The effective electron mobility of organic thin-film transistors (OTFTs) based on PTCDI-C13 with SiO2 gate insulator was increased by suppressing shallow-level interface traps on SiO2 with the PMMA layer, which can be partially accounted for by the multiple trap and release model. In this work, the thickness and the density of the PMMA layers were precisely controlled with a simple spin-coating process. Even 1.3-nm thick PMMA layer caused the improvements of the electron mobility and the air stability of the n-channel conduction.

KW - Air stability

KW - Electron trap

KW - Gate passivation layer

KW - n-Channel operation

KW - Organic thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=77953869648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953869648&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2010.05.027

DO - 10.1016/j.synthmet.2010.05.027

M3 - Article

VL - 160

SP - 1574

EP - 1578

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 13-14

ER -