Ion beam assisted chemical etching of single crystal diamond chips

Shuji Kiyohara, Iwao Miyamoto, Kazushige Kitazawa, Satoshi Honda

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Ion beam assisted chemical etching (IBACE) of diamond chips with an argon ion beam and a reactive oxygen gas flux was investigated. The specific etching rate of single crystal diamond chips with a (100) oriented face increases with increasing ion energy ranging from 300 to 1000 eV. The specific etching rates of the chip processed with 500 eV and 1000 eV Ar+ ions increase with increasing oxygen partial pressure, and reach a maximum rate at an oxygen partial pressure of approximately 0.02 and 0.05 Pa, respectively, and then decrease gradually with increasing oxygen partial pressure. The specific etching rate of the chip for IBACE which includes both physical and chemical reactions is approximately two times greater than that for ion beam etching (IBE) which causes only a physical sputtering reaction. Futhermore, the surface roughness of diamond chips before and after IBACE was evaluated using an atomic force microscope (AFM). Consequently, the surface roughness of the chip for IBACE increases with increasing substrate temperature, whereas that for IBE (only Ar+ ions) is almost constant as a function of the substrate temperature ranging from room temperature to 400°C.

Original languageEnglish
Pages (from-to)510-513
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume121
Issue number1-4
Publication statusPublished - 1997 Jan
Externally publishedYes

Fingerprint

Diamond
Ion beams
Etching
Diamonds
diamonds
ion beams
chips
etching
Single crystals
single crystals
Partial pressure
Oxygen
partial pressure
oxygen
Ions
surface roughness
Surface roughness
ions
Argon
Substrates

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Ion beam assisted chemical etching of single crystal diamond chips. / Kiyohara, Shuji; Miyamoto, Iwao; Kitazawa, Kazushige; Honda, Satoshi.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 121, No. 1-4, 01.1997, p. 510-513.

Research output: Contribution to journalArticle

Kiyohara, Shuji ; Miyamoto, Iwao ; Kitazawa, Kazushige ; Honda, Satoshi. / Ion beam assisted chemical etching of single crystal diamond chips. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1997 ; Vol. 121, No. 1-4. pp. 510-513.
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