Ionized impurity scattering in isotopically engineered, compensated Ge: Ga,As

Kohei M Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

Original languageEnglish
Pages (from-to)77-82
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 1
Publication statusPublished - 1997

Fingerprint

Scattering
Impurities
impurities
scattering
Hall mobility
Semiconductor materials
Temperature
temperature
Compensation and Redress

Keywords

  • Compensated semiconductors
  • Ionized impurity scattering
  • Mobility

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Itoh, K. M., Kinoshita, T., Walukiewicz, W., Beeman, J. W., Haller, E. E., Muto, J., ... Ozhogin, V. I. (1997). Ionized impurity scattering in isotopically engineered, compensated Ge: Ga,As. Materials Science Forum, 258-263(PART 1), 77-82.

Ionized impurity scattering in isotopically engineered, compensated Ge : Ga,As. / Itoh, Kohei M; Kinoshita, T.; Walukiewicz, W.; Beeman, J. W.; Haller, E. E.; Muto, J.; Farmer, J. W.; Ozhogin, V. I.

In: Materials Science Forum, Vol. 258-263, No. PART 1, 1997, p. 77-82.

Research output: Contribution to journalArticle

Itoh, KM, Kinoshita, T, Walukiewicz, W, Beeman, JW, Haller, EE, Muto, J, Farmer, JW & Ozhogin, VI 1997, 'Ionized impurity scattering in isotopically engineered, compensated Ge: Ga,As', Materials Science Forum, vol. 258-263, no. PART 1, pp. 77-82.
Itoh KM, Kinoshita T, Walukiewicz W, Beeman JW, Haller EE, Muto J et al. Ionized impurity scattering in isotopically engineered, compensated Ge: Ga,As. Materials Science Forum. 1997;258-263(PART 1):77-82.
Itoh, Kohei M ; Kinoshita, T. ; Walukiewicz, W. ; Beeman, J. W. ; Haller, E. E. ; Muto, J. ; Farmer, J. W. ; Ozhogin, V. I. / Ionized impurity scattering in isotopically engineered, compensated Ge : Ga,As. In: Materials Science Forum. 1997 ; Vol. 258-263, No. PART 1. pp. 77-82.
@article{f9abfd6931d744bd86beb72ad437cdbd,
title = "Ionized impurity scattering in isotopically engineered, compensated Ge: Ga,As",
abstract = "Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.",
keywords = "Compensated semiconductors, Ionized impurity scattering, Mobility",
author = "Itoh, {Kohei M} and T. Kinoshita and W. Walukiewicz and Beeman, {J. W.} and Haller, {E. E.} and J. Muto and Farmer, {J. W.} and Ozhogin, {V. I.}",
year = "1997",
language = "English",
volume = "258-263",
pages = "77--82",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "PART 1",

}

TY - JOUR

T1 - Ionized impurity scattering in isotopically engineered, compensated Ge

T2 - Ga,As

AU - Itoh, Kohei M

AU - Kinoshita, T.

AU - Walukiewicz, W.

AU - Beeman, J. W.

AU - Haller, E. E.

AU - Muto, J.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

PY - 1997

Y1 - 1997

N2 - Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

AB - Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

KW - Compensated semiconductors

KW - Ionized impurity scattering

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=0031389472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031389472&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031389472

VL - 258-263

SP - 77

EP - 82

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 1

ER -