Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As

K. M. Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ionized-impurity scattering of holes has been studied in isotopically engineered p-type Ge:Ga,As samples with compensation ratios between 0.08 and 0.61. Experimentally measured Hall mobilities at temperatures between 10 and 300 K are quantitatively compared with existing theories of ionized impurity scattering in highly compensated semiconductors. We find fair agreement with the theory based on the correlated distribution of ionized impurity centers.

Original languageEnglish
Pages (from-to)77-82
Number of pages6
JournalMaterials Science Forum
Volume258-263
Issue numberPART 1
DOIs
Publication statusPublished - 1997 Jan 1

Keywords

  • Compensated semiconductors
  • Ionized impurity scattering
  • Mobility

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Itoh, K. M., Kinoshita, T., Walukiewicz, W., Beeman, J. W., Haller, E. E., Muto, J., Farmer, J. W., & Ozhogin, V. I. (1997). Ionized impurity scattering in isotopically engineered, compensated Ge:Ga,As. Materials Science Forum, 258-263(PART 1), 77-82. https://doi.org/10.4028/www.scientific.net/msf.258-263.77