Isotope dependence of the indirect energy gap of germanium

Gordon Davies, E. C. Lightowlers, Kohei M Itoh, W. L. Hansen, E. E. Haller, V. Ozhogin

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA = 0.35±0.02 meV. We show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.

Original languageEnglish
Pages (from-to)1271-1273
Number of pages3
JournalSemiconductor Science and Technology
Volume7
Issue number10
DOIs
Publication statusPublished - 1992 Oct
Externally publishedYes

Fingerprint

Germanium
Isotopes
germanium
Energy gap
isotopes
Excitons
Lattice constants
Luminescence
lattice parameters
excitons
luminescence
Crystalline materials
temperature dependence
shift
approximation
Temperature
energy
LDS 751

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Davies, G., Lightowlers, E. C., Itoh, K. M., Hansen, W. L., Haller, E. E., & Ozhogin, V. (1992). Isotope dependence of the indirect energy gap of germanium. Semiconductor Science and Technology, 7(10), 1271-1273. https://doi.org/10.1088/0268-1242/7/10/010

Isotope dependence of the indirect energy gap of germanium. / Davies, Gordon; Lightowlers, E. C.; Itoh, Kohei M; Hansen, W. L.; Haller, E. E.; Ozhogin, V.

In: Semiconductor Science and Technology, Vol. 7, No. 10, 10.1992, p. 1271-1273.

Research output: Contribution to journalArticle

Davies, G, Lightowlers, EC, Itoh, KM, Hansen, WL, Haller, EE & Ozhogin, V 1992, 'Isotope dependence of the indirect energy gap of germanium', Semiconductor Science and Technology, vol. 7, no. 10, pp. 1271-1273. https://doi.org/10.1088/0268-1242/7/10/010
Davies, Gordon ; Lightowlers, E. C. ; Itoh, Kohei M ; Hansen, W. L. ; Haller, E. E. ; Ozhogin, V. / Isotope dependence of the indirect energy gap of germanium. In: Semiconductor Science and Technology. 1992 ; Vol. 7, No. 10. pp. 1271-1273.
@article{21c87b9a0d684848a5fdc7d1bbdfb3a3,
title = "Isotope dependence of the indirect energy gap of germanium",
abstract = "No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA = 0.35±0.02 meV. We show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.",
author = "Gordon Davies and Lightowlers, {E. C.} and Itoh, {Kohei M} and Hansen, {W. L.} and Haller, {E. E.} and V. Ozhogin",
year = "1992",
month = "10",
doi = "10.1088/0268-1242/7/10/010",
language = "English",
volume = "7",
pages = "1271--1273",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "10",

}

TY - JOUR

T1 - Isotope dependence of the indirect energy gap of germanium

AU - Davies, Gordon

AU - Lightowlers, E. C.

AU - Itoh, Kohei M

AU - Hansen, W. L.

AU - Haller, E. E.

AU - Ozhogin, V.

PY - 1992/10

Y1 - 1992/10

N2 - No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA = 0.35±0.02 meV. We show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.

AB - No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA = 0.35±0.02 meV. We show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.

UR - http://www.scopus.com/inward/record.url?scp=0026938066&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026938066&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/7/10/010

DO - 10.1088/0268-1242/7/10/010

M3 - Article

AN - SCOPUS:0026938066

VL - 7

SP - 1271

EP - 1273

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

ER -