Isotope dependence of the indirect energy gap of germanium

G. Davies, E. C. Lightowlers, K. Itoh, W. L. Hansen, E. E. Haller, V. Ozhogin

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

No-phonon luminescence from excitons bound to shallow donors and acceptors in crystalline germanium is found to move to higher energy with increasing mass number A of the germanium at the rate dE/dA=0.35+or-0.02 meV. The authors show that it is possible to predict this shift, to a good approximation, from the temperature dependence of the energy gap and the effect on the lattice parameter of the different isotopes.

Original languageEnglish
Article number010
Pages (from-to)1271-1273
Number of pages3
JournalSemiconductor Science and Technology
Volume7
Issue number10
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Davies, G., Lightowlers, E. C., Itoh, K., Hansen, W. L., Haller, E. E., & Ozhogin, V. (1992). Isotope dependence of the indirect energy gap of germanium. Semiconductor Science and Technology, 7(10), 1271-1273. [010]. https://doi.org/10.1088/0268-1242/7/10/010