Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon

K. K. Kohli, Gordon Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, Kohei M Itoh

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Abstract

By simply changing the isotopes of the Si atoms that neighbor an oxygen Oi atom in crystalline silicon, the measured decay rate τ of the asymmetric-stretch vibration (ν3=1136cm-1) of oxygen (Oi) in silicon changes by a factor of ∼2.5. These data establish that ν3 decays by creating one ν1 symmetric-stretch, local-vibrational mode of the Si-Oi-Si structure. If the residual energy (ν3-ν1) is less than the maximum frequency νm of the host lattice, as for Si28-O16-Si28 in natural silicon, then it is emitted as one lattice mode, and τ depends on the density of one-phonon states at ν3-ν1. If (ν3-ν1)>νm, as for O16 in single-isotope Si30 silicon, two lattice modes are created in addition to ν1, increasing τ. Prediction of τ for a particular defect clearly requires a detailed knowledge of that defect.

Original languageEnglish
Article number225503
JournalPhysical Review Letters
Volume96
Issue number22
DOIs
Publication statusPublished - 2006

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isotopes
life (durability)
vibration
silicon
oxygen
silicon isotopes
defects
decay rates
vibration mode
oxygen atoms
decay
predictions
atoms
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kohli, K. K., Davies, G., Vinh, N. Q., West, D., Estreicher, S. K., Gregorkiewicz, T., ... Itoh, K. M. (2006). Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon. Physical Review Letters, 96(22), [225503]. https://doi.org/10.1103/PhysRevLett.96.225503

Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon. / Kohli, K. K.; Davies, Gordon; Vinh, N. Q.; West, D.; Estreicher, S. K.; Gregorkiewicz, T.; Izeddin, I.; Itoh, Kohei M.

In: Physical Review Letters, Vol. 96, No. 22, 225503, 2006.

Research output: Contribution to journalArticle

Kohli, KK, Davies, G, Vinh, NQ, West, D, Estreicher, SK, Gregorkiewicz, T, Izeddin, I & Itoh, KM 2006, 'Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon', Physical Review Letters, vol. 96, no. 22, 225503. https://doi.org/10.1103/PhysRevLett.96.225503
Kohli KK, Davies G, Vinh NQ, West D, Estreicher SK, Gregorkiewicz T et al. Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon. Physical Review Letters. 2006;96(22). 225503. https://doi.org/10.1103/PhysRevLett.96.225503
Kohli, K. K. ; Davies, Gordon ; Vinh, N. Q. ; West, D. ; Estreicher, S. K. ; Gregorkiewicz, T. ; Izeddin, I. ; Itoh, Kohei M. / Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon. In: Physical Review Letters. 2006 ; Vol. 96, No. 22.
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