Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon

K. K. Kohli, Gordon Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, K. M. Itoh

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Abstract

By simply changing the isotopes of the Si atoms that neighbor an oxygen Oi atom in crystalline silicon, the measured decay rate τ of the asymmetric-stretch vibration (ν3=1136cm-1) of oxygen (Oi) in silicon changes by a factor of ∼2.5. These data establish that ν3 decays by creating one ν1 symmetric-stretch, local-vibrational mode of the Si-Oi-Si structure. If the residual energy (ν3-ν1) is less than the maximum frequency νm of the host lattice, as for Si28-O16-Si28 in natural silicon, then it is emitted as one lattice mode, and τ depends on the density of one-phonon states at ν3-ν1. If (ν3-ν1)>νm, as for O16 in single-isotope Si30 silicon, two lattice modes are created in addition to ν1, increasing τ. Prediction of τ for a particular defect clearly requires a detailed knowledge of that defect.

Original languageEnglish
Article number225503
JournalPhysical review letters
Volume96
Issue number22
DOIs
Publication statusPublished - 2006 Jun 20

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kohli, K. K., Davies, G., Vinh, N. Q., West, D., Estreicher, S. K., Gregorkiewicz, T., Izeddin, I., & Itoh, K. M. (2006). Isotope dependence of the lifetime of the 1136-cm-1 vibration of oxygen in silicon. Physical review letters, 96(22), [225503]. https://doi.org/10.1103/PhysRevLett.96.225503