Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

K. K. Kohli, Gordon Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, K. M. Itoh

Research output: Contribution to journalArticle

Abstract

Vibrational lifetimes of the asymmetric stretch mode (1136 cm-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm-1) local vibrational mode in the decay of the ν3 (1136 cm-1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume253
Issue number1-2
DOIs
Publication statusPublished - 2006 Dec 1

Keywords

  • Infrared absorption
  • Interstitial oxygen
  • Lifetime
  • Local modes
  • Silicon

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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