Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon

K. K. Kohli, Gordon Davies, N. Q. Vinh, D. West, S. K. Estreicher, T. Gregorkiewicz, I. Izeddin, Kohei M Itoh

Research output: Contribution to journalArticle

Abstract

Vibrational lifetimes of the asymmetric stretch mode (1136 cm-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm-1) local vibrational mode in the decay of the ν3 (1136 cm-1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume253
Issue number1-2
DOIs
Publication statusPublished - 2006 Dec

Fingerprint

Silicon
Isotopes
isotope effect
interstitials
Oxygen
life (durability)
temperature dependence
silicon
oxygen
Electron transitions
isotopes
Excited states
Temperature measurement
Ground state
vibration
Pumps
Spectroscopy
Atoms
Temperature
vibration mode

Keywords

  • Infrared absorption
  • Interstitial oxygen
  • Lifetime
  • Local modes
  • Silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon. / Kohli, K. K.; Davies, Gordon; Vinh, N. Q.; West, D.; Estreicher, S. K.; Gregorkiewicz, T.; Izeddin, I.; Itoh, Kohei M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, No. 1-2, 12.2006, p. 200-204.

Research output: Contribution to journalArticle

Kohli, K. K. ; Davies, Gordon ; Vinh, N. Q. ; West, D. ; Estreicher, S. K. ; Gregorkiewicz, T. ; Izeddin, I. ; Itoh, Kohei M. / Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 253, No. 1-2. pp. 200-204.
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AU - Kohli, K. K.

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AU - Vinh, N. Q.

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AU - Estreicher, S. K.

AU - Gregorkiewicz, T.

AU - Izeddin, I.

AU - Itoh, Kohei M

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AB - Vibrational lifetimes of the asymmetric stretch mode (1136 cm-1) of oxygen in silicon are measured using pump-probe spectroscopy and calculated by ab initio theory. We find that increasing the isotope of the nearest-neighbouring silicon atom increases the lifetime of the vibration. This isotope-dependence establishes the participation of the ν1 (613 cm-1) local vibrational mode in the decay of the ν3 (1136 cm-1) mode. Temperature-dependence measurements show the low-energy ν2 (29 cm-1) mode governs the repopulation rates for the ground state. We also analyze the temperature-dependence of transitions of excited states of the ν2 vibration.

KW - Infrared absorption

KW - Interstitial oxygen

KW - Lifetime

KW - Local modes

KW - Silicon

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