Isotopic disorder-effects on the phonons in germanium

H. D. Fuchs; C. H. Grein; M. Cardona; W. L. Hansen; K. Itoh; E. E. Haller

doi:10.1016/0038-1098(92)90631-I

Isotopic disorder-effects on the phonons in germanium

H. D. Fuchs, C. H. Grein, M. Cardona, W. L. Hansen, K. Itoh, E. E. Haller

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

High-resolution (±0.02 cm^-1) Raman and infrared transmission (ir) measurements were used to study the effect of isotopic disorder on the vibrational properties of Ge crystals. Calculations using the coherent potential and the self-consistent Born approximations were performed and compared with the experiment. The linewidth of the Raman modes is predominantly determined by the anharmonic decay of the optical phonons into lower-energy phonons, with a characteristic decay time of 6.1(±0.1) ps in natural Ge. The phonon energies of the Raman active phonon and the transverse optical ir modes at the Brillouin zone boundary (L,K,W,X-critical point) are shifted by the isotopic disorder in the material. The frequency shifts and the line broadenings are in good agreement with the theoretical calculations.

Original language	English
Pages (from-to)	225-228
Number of pages	4
Journal	Solid State Communications
Volume	82
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(92)90631-I
Publication status	Published - 1992 Apr
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Isotopic disorder-effects on the phonons in germanium",

abstract = "High-resolution (±0.02 cm-1) Raman and infrared transmission (ir) measurements were used to study the effect of isotopic disorder on the vibrational properties of Ge crystals. Calculations using the coherent potential and the self-consistent Born approximations were performed and compared with the experiment. The linewidth of the Raman modes is predominantly determined by the anharmonic decay of the optical phonons into lower-energy phonons, with a characteristic decay time of 6.1(±0.1) ps in natural Ge. The phonon energies of the Raman active phonon and the transverse optical ir modes at the Brillouin zone boundary (L,K,W,X-critical point) are shifted by the isotopic disorder in the material. The frequency shifts and the line broadenings are in good agreement with the theoretical calculations.",

author = "Fuchs, {H. D.} and Grein, {C. H.} and M. Cardona and Hansen, {W. L.} and K. Itoh and Haller, {E. E.}",

note = "Funding Information: We are thankful to M. Siemers, P. Wurster, and H. Hirt for technical assistance. C.H.G. acknowledges partial support of the Natural Sciences and Engineering Research Council of Canada. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1992",

month = apr,

doi = "10.1016/0038-1098(92)90631-I",

language = "English",

volume = "82",

pages = "225--228",

journal = "Solid State Communications",

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publisher = "Elsevier Limited",

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TY - JOUR

T1 - Isotopic disorder-effects on the phonons in germanium

AU - Fuchs, H. D.

AU - Grein, C. H.

AU - Cardona, M.

AU - Hansen, W. L.

AU - Itoh, K.

AU - Haller, E. E.

N1 - Funding Information: We are thankful to M. Siemers, P. Wurster, and H. Hirt for technical assistance. C.H.G. acknowledges partial support of the Natural Sciences and Engineering Research Council of Canada. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1992/4

Y1 - 1992/4

N2 - High-resolution (±0.02 cm-1) Raman and infrared transmission (ir) measurements were used to study the effect of isotopic disorder on the vibrational properties of Ge crystals. Calculations using the coherent potential and the self-consistent Born approximations were performed and compared with the experiment. The linewidth of the Raman modes is predominantly determined by the anharmonic decay of the optical phonons into lower-energy phonons, with a characteristic decay time of 6.1(±0.1) ps in natural Ge. The phonon energies of the Raman active phonon and the transverse optical ir modes at the Brillouin zone boundary (L,K,W,X-critical point) are shifted by the isotopic disorder in the material. The frequency shifts and the line broadenings are in good agreement with the theoretical calculations.

AB - High-resolution (±0.02 cm-1) Raman and infrared transmission (ir) measurements were used to study the effect of isotopic disorder on the vibrational properties of Ge crystals. Calculations using the coherent potential and the self-consistent Born approximations were performed and compared with the experiment. The linewidth of the Raman modes is predominantly determined by the anharmonic decay of the optical phonons into lower-energy phonons, with a characteristic decay time of 6.1(±0.1) ps in natural Ge. The phonon energies of the Raman active phonon and the transverse optical ir modes at the Brillouin zone boundary (L,K,W,X-critical point) are shifted by the isotopic disorder in the material. The frequency shifts and the line broadenings are in good agreement with the theoretical calculations.

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EP - 228

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 4

ER -

Isotopic disorder-effects on the phonons in germanium

Abstract

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