Isotopic disorder-effects on the phonons in germanium

H. D. Fuchs, C. H. Grein, M. Cardona, W. L. Hansen, K. Itoh, E. E. Haller

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High-resolution (±0.02 cm-1) Raman and infrared transmission (ir) measurements were used to study the effect of isotopic disorder on the vibrational properties of Ge crystals. Calculations using the coherent potential and the self-consistent Born approximations were performed and compared with the experiment. The linewidth of the Raman modes is predominantly determined by the anharmonic decay of the optical phonons into lower-energy phonons, with a characteristic decay time of 6.1(±0.1) ps in natural Ge. The phonon energies of the Raman active phonon and the transverse optical ir modes at the Brillouin zone boundary (L,K,W,X-critical point) are shifted by the isotopic disorder in the material. The frequency shifts and the line broadenings are in good agreement with the theoretical calculations.

Original languageEnglish
Pages (from-to)225-228
Number of pages4
JournalSolid State Communications
Issue number4
Publication statusPublished - 1992 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Fuchs, H. D., Grein, C. H., Cardona, M., Hansen, W. L., Itoh, K., & Haller, E. E. (1992). Isotopic disorder-effects on the phonons in germanium. Solid State Communications, 82(4), 225-228.