Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions

A. Yang, H. J. Lian, M. L.W. Thewalt, M. Uemura, A. Sagara, K. M. Itoh, E. E. Haller, J. W. Ager, S. A. Lyon

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The strain-induced splitting of the impurity bound exciton (BE) transitions in epitaxial layers of isotopically enriched 28Si grown on silicon substrates of natural isotopic composition has been studied using high-resolution photoluminescence (PL) spectroscopy. The slight difference in lattice parameter between the 28Si epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which can be detected with remarkable sensitivity using low-temperature PL. Measurement of the splitting of the BE transitions in these epitaxial layers of 28Si provides us a method for determining the isotopic mass dependence of the lattice parameter in silicon with unprecedented precision. The level of precision achieved is attributed to the fact that the BE no-phonon transitions in isotopically enriched silicon are much sharper than in natural silicon. We find that scaled to an isotopic mass difference (ΔM) of 1 amu, the relative difference in lattice parameter (|Δa/a|) for silicon is 3.3×10-5.

Original languageEnglish
Pages (from-to)54-56
Number of pages3
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Exciton
  • Isotopic
  • Photoluminescence
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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