Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions

A. Yang, H. J. Lian, M. L W Thewalt, M. Uemura, A. Sagara, Kohei M Itoh, E. E. Haller, J. W. Ager, S. A. Lyon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The strain-induced splitting of the impurity bound exciton (BE) transitions in epitaxial layers of isotopically enriched 28Si grown on silicon substrates of natural isotopic composition has been studied using high-resolution photoluminescence (PL) spectroscopy. The slight difference in lattice parameter between the 28Si epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which can be detected with remarkable sensitivity using low-temperature PL. Measurement of the splitting of the BE transitions in these epitaxial layers of 28Si provides us a method for determining the isotopic mass dependence of the lattice parameter in silicon with unprecedented precision. The level of precision achieved is attributed to the fact that the BE no-phonon transitions in isotopically enriched silicon are much sharper than in natural silicon. We find that scaled to an isotopic mass difference (ΔM) of 1 amu, the relative difference in lattice parameter (|Δa/a|) for silicon is 3.3×10-5.

Original languageEnglish
Pages (from-to)54-56
Number of pages3
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1

Fingerprint

Silicon
Electron transitions
Excitons
Lattice constants
lattice parameters
Epitaxial layers
excitons
Impurities
impurities
silicon
photoluminescence
Photoluminescence spectroscopy
Substrates
LDS 751
Photoluminescence
sensitivity
high resolution
Chemical analysis
spectroscopy

Keywords

  • Exciton
  • Isotopic
  • Photoluminescence
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions. / Yang, A.; Lian, H. J.; Thewalt, M. L W; Uemura, M.; Sagara, A.; Itoh, Kohei M; Haller, E. E.; Ager, J. W.; Lyon, S. A.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 54-56.

Research output: Contribution to journalArticle

Yang, A. ; Lian, H. J. ; Thewalt, M. L W ; Uemura, M. ; Sagara, A. ; Itoh, Kohei M ; Haller, E. E. ; Ager, J. W. ; Lyon, S. A. / Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 54-56.
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AU - Lian, H. J.

AU - Thewalt, M. L W

AU - Uemura, M.

AU - Sagara, A.

AU - Itoh, Kohei M

AU - Haller, E. E.

AU - Ager, J. W.

AU - Lyon, S. A.

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N2 - The strain-induced splitting of the impurity bound exciton (BE) transitions in epitaxial layers of isotopically enriched 28Si grown on silicon substrates of natural isotopic composition has been studied using high-resolution photoluminescence (PL) spectroscopy. The slight difference in lattice parameter between the 28Si epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which can be detected with remarkable sensitivity using low-temperature PL. Measurement of the splitting of the BE transitions in these epitaxial layers of 28Si provides us a method for determining the isotopic mass dependence of the lattice parameter in silicon with unprecedented precision. The level of precision achieved is attributed to the fact that the BE no-phonon transitions in isotopically enriched silicon are much sharper than in natural silicon. We find that scaled to an isotopic mass difference (ΔM) of 1 amu, the relative difference in lattice parameter (|Δa/a|) for silicon is 3.3×10-5.

AB - The strain-induced splitting of the impurity bound exciton (BE) transitions in epitaxial layers of isotopically enriched 28Si grown on silicon substrates of natural isotopic composition has been studied using high-resolution photoluminescence (PL) spectroscopy. The slight difference in lattice parameter between the 28Si epitaxial layer and the natural silicon substrate induces a biaxial strain in the epitaxial layer, which can be detected with remarkable sensitivity using low-temperature PL. Measurement of the splitting of the BE transitions in these epitaxial layers of 28Si provides us a method for determining the isotopic mass dependence of the lattice parameter in silicon with unprecedented precision. The level of precision achieved is attributed to the fact that the BE no-phonon transitions in isotopically enriched silicon are much sharper than in natural silicon. We find that scaled to an isotopic mass difference (ΔM) of 1 amu, the relative difference in lattice parameter (|Δa/a|) for silicon is 3.3×10-5.

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