Isotopically controlled self-assembled Ge/Si nanostructures

O. Moutanabbir, S. Miyamoto, A. Fujimoto, Kohei M Itoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

By combining Raman scattering and stable Ge isotopes tracing, we present a new analytical procedure to address the stability of 2D Stranski-Krastanov WL during 3D transition. Our approach is based on the experimentally verified fact that WL has no clear Raman modes and on the dependency of phonon frequencies on the isotopic composition. A direct quantification of the amount of material transferred from WL to 3D islands was achieved for Ge epitaxy on HF-etched Si(0 0 1). The estimated isotopic abundance suggests an exchange process between WL atoms and Ge atoms from direct flux during the growth of island. The influence of surface preparation on islands morphology is also investigated. We found that the growth on HF-etched Si(0 0 1) induces a low density of large dome-like islands. Carbon contaminants seem to play a critical role in self-assembling of Ge islands on hydrophobic Si(0 0 1) surface.

Original languageEnglish
Pages (from-to)324-329
Number of pages6
JournalJournal of Crystal Growth
Volume301-302
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr

Fingerprint

Nanostructures
Atoms
Domes
Epitaxial growth
Isotopes
Raman scattering
Ion exchange
Carbon
Impurities
Fluxes
Chemical analysis
tracing
domes
assembling
epitaxy
contaminants
atoms
isotopes
Raman spectra
preparation

Keywords

  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • B1. Germanium silicon alloys

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Isotopically controlled self-assembled Ge/Si nanostructures. / Moutanabbir, O.; Miyamoto, S.; Fujimoto, A.; Itoh, Kohei M.

In: Journal of Crystal Growth, Vol. 301-302, No. SPEC. ISS., 04.2007, p. 324-329.

Research output: Contribution to journalArticle

Moutanabbir, O, Miyamoto, S, Fujimoto, A & Itoh, KM 2007, 'Isotopically controlled self-assembled Ge/Si nanostructures', Journal of Crystal Growth, vol. 301-302, no. SPEC. ISS., pp. 324-329. https://doi.org/10.1016/j.jcrysgro.2006.11.178
Moutanabbir, O. ; Miyamoto, S. ; Fujimoto, A. ; Itoh, Kohei M. / Isotopically controlled self-assembled Ge/Si nanostructures. In: Journal of Crystal Growth. 2007 ; Vol. 301-302, No. SPEC. ISS. pp. 324-329.
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