Isotopically engineered silicon nanoelectronics

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages303-306
Number of pages4
DOIs
Publication statusPublished - 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

Other

Other2007 IEEE International Electron Devices Meeting, IEDM
CountryUnited States
CityWashington, DC
Period07/12/1007/12/12

Fingerprint

Nanoelectronics
Quantum computers
Silicon
Isotopes
Computer aided design
Fabrication

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Itoh, K. M. (2007). Isotopically engineered silicon nanoelectronics. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 303-306). [4418931] https://doi.org/10.1109/IEDM.2007.4418931

Isotopically engineered silicon nanoelectronics. / Itoh, Kohei M.

Technical Digest - International Electron Devices Meeting, IEDM. 2007. p. 303-306 4418931.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Itoh, KM 2007, Isotopically engineered silicon nanoelectronics. in Technical Digest - International Electron Devices Meeting, IEDM., 4418931, pp. 303-306, 2007 IEEE International Electron Devices Meeting, IEDM, Washington, DC, United States, 07/12/10. https://doi.org/10.1109/IEDM.2007.4418931
Itoh KM. Isotopically engineered silicon nanoelectronics. In Technical Digest - International Electron Devices Meeting, IEDM. 2007. p. 303-306. 4418931 https://doi.org/10.1109/IEDM.2007.4418931
Itoh, Kohei M. / Isotopically engineered silicon nanoelectronics. Technical Digest - International Electron Devices Meeting, IEDM. 2007. pp. 303-306
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