Isotopically engineered silicon nanoelectronics

Kohei M. Itoh

doi:10.1109/IEDM.2007.4418931

Isotopically engineered silicon nanoelectronics

Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.

Original language	English
Article number	4418931
Pages (from-to)	303-306
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4418931
Publication status	Published - 2007 Dec 1
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2007.4418931

Cite this

@article{ccc1ffa35c324078a59cf3b149bd0145,

title = "Isotopically engineered silicon nanoelectronics",

abstract = "Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.",

author = "Itoh, {Kohei M.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/IEDM.2007.4418931",

language = "English",

pages = "303--306",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

}

TY - JOUR

T1 - Isotopically engineered silicon nanoelectronics

AU - Itoh, Kohei M.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.

AB - Isotope engineering of silicon has been employed towards development of silicon-based quantum computers and complete modeling of nano-CMOS fabrication processes towards development of next-generation technology computer aided design (TCAD) systems.

UR - http://www.scopus.com/inward/record.url?scp=50249123445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249123445&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2007.4418931

DO - 10.1109/IEDM.2007.4418931

M3 - Conference article

AN - SCOPUS:50249123445

SN - 0163-1918

SP - 303

EP - 306

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

M1 - 4418931

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

Isotopically engineered silicon nanoelectronics

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this