Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    15 Citations (Scopus)

    Abstract

    Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

    Original languageEnglish
    Title of host publication2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
    Pages78-79
    Number of pages2
    DOIs
    Publication statusPublished - 2008 Sep 23
    Event2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States
    Duration: 2008 Jun 172008 Jun 19

    Publication series

    NameDigest of Technical Papers - Symposium on VLSI Technology
    ISSN (Print)0743-1562

    Other

    Other2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
    CountryUnited States
    CityHonolulu, HI
    Period08/6/1708/6/19

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Kobayashi, S., Saitoh, M., & Uchida, K. (2008). Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. In 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT (pp. 78-79). [4588569] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2008.4588569