Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

Random telegraph noise (RTN) in scaled FETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-κ gate dielectric FETs have not been fully studied yet. In this paper, we have studied RTN in high-κ pFETs in comparison with that in SiO2 pFETs. It is found for the first time that the reduction of the RTN amplitude (ΔI d/Id) by the surface holes is smaller in high-κ pFETs, comparing to the SiO2 pFETs. It is also found that slower traps in the high-κ0 gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-κ gate dielectric.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Pages78-79
Number of pages2
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States
Duration: 2008 Jun 172008 Jun 19

Other

Other2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
CountryUnited States
CityHonolulu, HI
Period08/6/1708/6/19

Fingerprint

Telegraph
Gate dielectrics
Field effect transistors
Permittivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kobayashi, S., Saitoh, M., & Uchida, K. (2008). Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 78-79). [4588569] https://doi.org/10.1109/VLSIT.2008.4588569

Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. / Kobayashi, Shigeki; Saitoh, Masumi; Uchida, Ken.

Digest of Technical Papers - Symposium on VLSI Technology. 2008. p. 78-79 4588569.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, S, Saitoh, M & Uchida, K 2008, Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. in Digest of Technical Papers - Symposium on VLSI Technology., 4588569, pp. 78-79, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, Honolulu, HI, United States, 08/6/17. https://doi.org/10.1109/VLSIT.2008.4588569
Kobayashi S, Saitoh M, Uchida K. Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. In Digest of Technical Papers - Symposium on VLSI Technology. 2008. p. 78-79. 4588569 https://doi.org/10.1109/VLSIT.2008.4588569
Kobayashi, Shigeki ; Saitoh, Masumi ; Uchida, Ken. / Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs. Digest of Technical Papers - Symposium on VLSI Technology. 2008. pp. 78-79
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