Key capacitive parameters for designing single-electron transistor charge sensors

Kosuke Horibe, Tetsuo Kodera, Tomohiro Kambara, Ken Uchida, Shunri Oda

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    Single-electron transistors (SETs) are efficient charge sensors for reading out spin or charge qubits confined in quantum dots (QDs). To investigate their capacitive parameters, which are related to the signal-to-noise ratio (SNR) during qubit readout, twin silicon single QDs were fabricated using a lithographic process on a silicon-on-insulator substrate. Since the configuration and dimensions of the QDs could be determined by direct imaging, the theoretical capacitive parameters could be compared to the measured values. Good agreement was found between the calculated and measured values, which confirms the validity of the calculation method. The results indicated that decreasing the SET diameter reduces the capacitive coupling between qubits but increases the signal-to-noise ratio for both dc and radio frequency single-shot measurements. Since these results are independent of the device materials, they are useful for establishing guidelines for the design of SET charge sensors in lateral QD-SET structures based on a two-dimensional electron gas.

    Original languageEnglish
    Article number093715
    JournalJournal of Applied Physics
    Volume111
    Issue number9
    DOIs
    Publication statusPublished - 2012 May 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Key capacitive parameters for designing single-electron transistor charge sensors'. Together they form a unique fingerprint.

  • Cite this