Kinking and cracking caused by slip in single crystals of silicon carbide

Hisayuki Suematsu, Tetsuya Suzuki, Takayoshi Iseki, Tsutomu Mori

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

α-SiC single crystals were compressed parallel to the basal plane, (0001), at temperatures between 900° and 1500 °C. Plastic deformation by slip on the basal planes which accompanied kinking occurred above 1000 °C. At kink boundaries, two kinds of cracks were observed. One was the cracks elongated parallel to the basal plane. This kind of crack was initiated by the tensile stress produced by piled-up dislocations on the basal planes against a kink boundary. The other was on a kink boundary, and was induced by the stress of dislocations, heterogeneously distributed on the kink boundary. The initiation of cracks produced by dislocations was considered to be a possible cause of fracture in polycrystalline SiC at high temperatures.

Original languageEnglish
Pages (from-to)173-178
Number of pages6
JournalJournal of the American Ceramic Society
Volume74
Issue number1
Publication statusPublished - 1991 Jan
Externally publishedYes

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Silicon carbide
Single crystals
Cracks
Tensile stress
Plastic deformation
Temperature
silicon carbide

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Kinking and cracking caused by slip in single crystals of silicon carbide. / Suematsu, Hisayuki; Suzuki, Tetsuya; Iseki, Takayoshi; Mori, Tsutomu.

In: Journal of the American Ceramic Society, Vol. 74, No. 1, 01.1991, p. 173-178.

Research output: Contribution to journalArticle

Suematsu, Hisayuki ; Suzuki, Tetsuya ; Iseki, Takayoshi ; Mori, Tsutomu. / Kinking and cracking caused by slip in single crystals of silicon carbide. In: Journal of the American Ceramic Society. 1991 ; Vol. 74, No. 1. pp. 173-178.
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