Kondo effect in silicon quantum dots with valley degeneracy

M. Eto, Y. Hada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We theoretically examine electronic states and Kondo effect in silicon quantum dots, taking into account a multivalley structure of conduction band. In the quantum dots, discrete energy levels are almost degenerate owing to two equivalent valleys. When an electron occupies the levels, an enhanced Kondo effect of SU(4) symmetry is expected. When two electrons are accommodated in a quantum dot, three spin-singlet and one spin-triplet states can be six-fold degenerate since the exchange integral is negligible when the dot size is much larger than the lattice constant of silicon. An underscreening Kondo effect involving these states is realized if tunnel couplings are equivalent for the levels. Otherwise, a "two-stage Kondo effect" is observed as a function of temperature, reflecting two independent SU(2) Kondo effects.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1382-1383
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 2006 Aug 102006 Oct 17

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period06/8/1006/10/17

Keywords

  • Kondoeffect
  • Multivalley
  • Quantumdot
  • Silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Eto, M., & Hada, Y. (2006). Kondo effect in silicon quantum dots with valley degeneracy. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (pp. 1382-1383). (AIP Conference Proceedings; Vol. 850). https://doi.org/10.1063/1.2355221