The Kondo effect in coupled quantum dots is investigated from the viewpoint of transmission spectroscopy using the slave-boson formalism of the Anderson model. The antiferromagnetic spin-spin coupling J between the dots is taken into account. Conductance G through the dots connected in a series is characterized by the competition between the dot-dot tunneling coupling VC and the level broadening Δ in the dots (dot-lead coupling). When VC/Δ<1, the Kondo resonance is formed between each dot and lead, which is replaced by a spin-singlet state in the dots at low gate voltages. The gate voltage dependence of G has a sharp peak of 2e2/h in height in the crossover region between the Kondo and spin-singlet states. The sharp peak of G survives when the energy levels are different between the dots. When VC/Δ>1, the "molecular levels" between the Kondo resonant states appear; the Kondo resonant peaks are located below and above the Fermi level in the leads at low gate voltages. The gate voltage dependence of G has a broad peak, which is robust against J. The broad peak splits into two peaks when the energy levels are different, reflecting the formation of the asymmetric molecular levels between the Kondo resonant states.
|Number of pages||11279441|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2001 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics