Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor

Masumi Saitoh, Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

We demonstrate large Coulomb blockade oscillations in a silicon single-electron transistor (Si SET) whose peak-to-valley ratio is about 2 at room temperature. The device is fabricated in the form of a point-contact metal-oxide-semiconductor field-effect transistor (MOSFET) and the gate oxide is formed by chemical vapor deposition (CVD) instead of thermal oxidation. From the analysis of current-voltage characteristics, it is found that the single-electron addition energy is about 259 meV and the dot diameter is less than 4.4 nm. The mechanism of silicon dot formation is also discussed.

Original languageEnglish
Pages (from-to)2010-2012
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 B
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes

Keywords

  • Coulomb blockade oscillation
  • Electron addition energy
  • MOSFET
  • Quantized level spacing
  • Room-temperature operation
  • Silicon single-electron transistor
  • Ultrasmall quantum dot

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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