Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor

Masumi Saitoh, Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

We demonstrate large Coulomb blockade oscillations in a silicon single-electron transistor (Si SET) whose peak-to-valley ratio is about 2 at room temperature. The device is fabricated in the form of a point-contact metal-oxide-semiconductor field-effect transistor (MOSFET) and the gate oxide is formed by chemical vapor deposition (CVD) instead of thermal oxidation. From the analysis of current-voltage characteristics, it is found that the single-electron addition energy is about 259 meV and the dot diameter is less than 4.4 nm. The mechanism of silicon dot formation is also discussed.

Original languageEnglish
Pages (from-to)2010-2012
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 B
Publication statusPublished - 2001
Externally publishedYes

Fingerprint

Single electron transistors
silicon transistors
single electron transistors
metal oxide semiconductors
Semiconductor quantum dots
valleys
field effect transistors
quantum dots
vapor deposition
Coulomb blockade
Silicon
oscillations
oxidation
oxides
Electrons
Point contacts
MOSFET devices
electric potential
silicon
room temperature

Keywords

  • Coulomb blockade oscillation
  • Electron addition energy
  • MOSFET
  • Quantized level spacing
  • Room-temperature operation
  • Silicon single-electron transistor
  • Ultrasmall quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor. / Saitoh, Masumi; Takahashi, Nobuyoshi; Ishikuro, Hiroki; Hiramoto, Toshiro.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 3 B, 2001, p. 2010-2012.

Research output: Contribution to journalArticle

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KW - Electron addition energy

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KW - Quantized level spacing

KW - Room-temperature operation

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