Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

Shogo Ishizuka; Akimasa Yamada; Hajime Shibata; Paul Fons; Keiichiro Sakurai; Koji Matsubara; Shigeru Niki

doi:10.1016/j.solmat.2008.09.043

Large grain Cu(In,Ga)Se₂ thin film growth using a Se-radical beam source

Shogo Ishizuka, Akimasa Yamada, Hajime Shibata, Paul Fons, Keiichiro Sakurai, Koji Matsubara, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Cu(In,Ga)Se₂ (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe₂ (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe₂ (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

Original language	English
Pages (from-to)	792-796
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	6-7
DOIs	https://doi.org/10.1016/j.solmat.2008.09.043
Publication status	Published - 2009 Jun
Externally published	Yes

Keywords

CGS
CIGS
CIS
Cu(In,Ga)Se
Se-radical source
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2008.09.043

Cite this

@article{be261eb75c3746d2820a211c20be3d86,

title = "Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source",

abstract = "Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.",

keywords = "CGS, CIGS, CIS, Cu(In,Ga)Se, Se-radical source, Thin film",

author = "Shogo Ishizuka and Akimasa Yamada and Hajime Shibata and Paul Fons and Keiichiro Sakurai and Koji Matsubara and Shigeru Niki",

note = "Funding Information: This work was supported in part by the Incorporated Administrative Agency, New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).",

year = "2009",

month = jun,

doi = "10.1016/j.solmat.2008.09.043",

language = "English",

volume = "93",

pages = "792--796",

journal = "Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "6-7",

}

TY - JOUR

T1 - Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Shibata, Hajime

AU - Fons, Paul

AU - Sakurai, Keiichiro

AU - Matsubara, Koji

AU - Niki, Shigeru

N1 - Funding Information: This work was supported in part by the Incorporated Administrative Agency, New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).

PY - 2009/6

Y1 - 2009/6

N2 - Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

AB - Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

KW - CGS

KW - CIGS

KW - CIS

KW - Cu(In,Ga)Se

KW - Se-radical source

KW - Thin film

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DO - 10.1016/j.solmat.2008.09.043

M3 - Article

AN - SCOPUS:67349264082

VL - 93

SP - 792

EP - 796

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

IS - 6-7

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