Abstract
Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.
Original language | English |
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Pages (from-to) | 792-796 |
Number of pages | 5 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 93 |
Issue number | 6-7 |
DOIs | |
Publication status | Published - 2009 Jun |
Externally published | Yes |
Keywords
- CGS
- CIGS
- CIS
- Cu(In,Ga)Se
- Se-radical source
- Thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films