Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

Shogo Ishizuka; Akimasa Yamada; Hajime Shibata; Paul Fons; Keiichiro Sakurai; Koji Matsubara; Shigeru Niki

doi:10.1016/j.solmat.2008.09.043

Large grain Cu(In,Ga)Se₂ thin film growth using a Se-radical beam source

Shogo Ishizuka, Akimasa Yamada, Hajime Shibata, Paul Fons, Keiichiro Sakurai, Koji Matsubara, Shigeru Niki

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Cu(In,Ga)Se₂ (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe₂ (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe₂ (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

Original language	English
Pages (from-to)	792-796
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	6-7
DOIs	https://doi.org/10.1016/j.solmat.2008.09.043
Publication status	Published - 2009 Jun

Keywords

CGS
CIGS
CIS
Cu(In,Ga)Se
Se-radical source
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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@article{be261eb75c3746d2820a211c20be3d86,

title = "Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source",

abstract = "Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.",

keywords = "CGS, CIGS, CIS, Cu(In,Ga)Se, Se-radical source, Thin film",

author = "Shogo Ishizuka and Akimasa Yamada and Hajime Shibata and Paul Fons and Keiichiro Sakurai and Koji Matsubara and Shigeru Niki",

note = "Funding Information: This work was supported in part by the Incorporated Administrative Agency, New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI). ",

year = "2009",

month = jun,

doi = "10.1016/j.solmat.2008.09.043",

language = "English",

volume = "93",

pages = "792--796",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

number = "6-7",

}

TY - JOUR

T1 - Large grain Cu(In,Ga)Se2 thin film growth using a Se-radical beam source

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Shibata, Hajime

AU - Fons, Paul

AU - Sakurai, Keiichiro

AU - Matsubara, Koji

AU - Niki, Shigeru

N1 - Funding Information: This work was supported in part by the Incorporated Administrative Agency, New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).

PY - 2009/6

Y1 - 2009/6

N2 - Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

AB - Cu(In,Ga)Se2 (CIGS) thin films were grown by the three-stage process using a rf-plasma cracked Se-radical beam source. CuGaSe2 (CGS) films grown at a maximum substrate temperature of 550 °C and CuInSe2 (CIS) and CIGS films grown at the lower temperature of 400 °C exhibited highly dense surfaces and large grain size compared with films grown using a conventional Se-evaporative source. This result is attributed to the modification of the growth kinetics due to the presence of active Se-radical species and enhanced surface migration during growth. The effect on CIGS film properties and solar cell performance has been investigated. Enhancements in the cell efficiencies of 400 °C-grown CIS and CIGS solar cells have been demonstrated using a Se-radical source.

KW - CGS

KW - CIGS

KW - CIS

KW - Cu(In,Ga)Se

KW - Se-radical source

KW - Thin film

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VL - 93

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JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

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