Laser ablation deposition of crystalline copper-phthalocyanine thin films

E. Ina, N. Matsumoto, E. Shikada, Fumihiko Kannari

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The poor crystallinity of copper-phthalocyanine (CuPc) thin films fabricated via KrF laser ablation is significantly improved by three different assisting methods applied during deposition: (1) elevating substrate temperature only up to 50°C; (2) irradiating with HeNe laser of ∼ 200 μW/cm2; (3) applying DC electric field. Highest crystallinity is obtained when the film is deposited under DC electric field of ∼ 50 V/cm in the direction of film thickness. This in-process electric poling also works for 4-dialkylamino-4′-nitrostilbensen (DANS) film.

Original languageEnglish
Pages (from-to)574-578
Number of pages5
JournalApplied Surface Science
Volume127-129
Publication statusPublished - 1998 May

Fingerprint

Laser ablation
laser ablation
crystallinity
direct current
Electric fields
Crystalline materials
Copper
Thin films
copper
electric fields
thin films
Film thickness
film thickness
Lasers
Substrates
lasers
Temperature
temperature
copper phthalocyanine
Direction compound

Keywords

  • Copper-phthalocyanine
  • Electric poling
  • Laser ablation deposition
  • Organic thin films

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Laser ablation deposition of crystalline copper-phthalocyanine thin films. / Ina, E.; Matsumoto, N.; Shikada, E.; Kannari, Fumihiko.

In: Applied Surface Science, Vol. 127-129, 05.1998, p. 574-578.

Research output: Contribution to journalArticle

Ina, E. ; Matsumoto, N. ; Shikada, E. ; Kannari, Fumihiko. / Laser ablation deposition of crystalline copper-phthalocyanine thin films. In: Applied Surface Science. 1998 ; Vol. 127-129. pp. 574-578.
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