Laser-induced desorption from compound semiconductors

K. Ichige, Yoshinori Matsumoto, A. Namiki

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Laser-induced desorption in compound semiconductors has been investigated using a dynamic mass spectroscopic method. When the target material was characterized by its bond ionicity fi, as scaled by Phillips [13], the observed threshold fluence shows a good decreasing correlation with fi. The concept of the fi dependent structural instability, which is well established in the ground state [13], was extended to the electronically excited system. A model is proposed for laser sputtering in tetrahedrally bonded materials based on a phase transition mechanism under a dense electron-hole plasma, which involves a dimerization interaction between nonmetallic elements.

Original languageEnglish
Pages (from-to)820-823
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume33
Issue number1-4
DOIs
Publication statusPublished - 1988 Jun 2
Externally publishedYes

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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